LATERAL-SUPERLATTICE EFFECT ON WEAK LOCALIZATION IN SILICON INVERSION-LAYERS

被引：3

作者：

GAO, JR ^{[1
]}

DEGRAAF, C ^{[1
]}

SCHUSSLER, AS ^{[1
]}

CARO, J ^{[1
]}

RADELAAR, S ^{[1
]}

HEYERS, K ^{[1
]}

机构：

[1] RHEIN WESTFAL TH AACHEN,INST SEMICOND ELECTR,W-5100 AACHEN,GERMANY

来源：

PHYSICAL REVIEW B | 1992年 / 46卷 / 15期

关键词：

D O I：

10.1103/PhysRevB.46.9885

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

It is found that the magnitude of the weak-localization (WL) correction to the conductance in a lateral superlattice (LSL) differs considerably from that in a homogeneous two-dimensional electron gas. The LSL effects were observed by measuring the dependence of the magnetoconductance on the strength of a modulated potential in silicon inversion layers. For parallel transport in a LSL the WL is enhanced, while it is reduced for perpendicular transport. This agrees with a recent theory for WL in a LSL. The effect is larger for stronger potential modulation and its maximum value deduced from the experiments is 2.8.

引用

页码：9885 / 9888

页数：4

共 50 条

[1] MAGNETOCONDUCTANCE AND WEAK LOCALIZATION IN SILICON INVERSION-LAYERS
WHEELER, RG
PHYSICAL REVIEW B, 1981, 24 (08): : 4645 - 4651
[2] LOCALIZATION AND QUANTIZATION IN SILICON INVERSION-LAYERS
PEPPER, M
CONTEMPORARY PHYSICS, 1985, 26 (03) : 257 - 293
[3] THE THERMOELECTRIC EFFECT IN SILICON ON SAPPHIRE INVERSION-LAYERS
SYME, RT
PEPPER, M
GUNDLACH, A
RUTHVEN, A
SUPERLATTICES AND MICROSTRUCTURES, 1988, 5 (01) : 103 - 107
[4] ELECTRON LOCALIZATION AND THE QUANTIZED HALL RESISTANCE IN SILICON INVERSION-LAYERS
WAKABAYASHI, J
MYRON, HW
PEPPER, M
PHYSICA B & C, 1983, 117 (MAR): : 691 - 693
[5] LOGARITHMIC CORRECTIONS, LOCALIZATION AND INTERACTION EFFECTS IN SILICON INVERSION-LAYERS
DAVIES, RA
UREN, MJ
PEPPER, M
SURFACE SCIENCE, 1982, 113 (1-3) : 518 - 519
[6] DEHAAS-VANALPHEN EFFECT IN SILICON INVERSION-LAYERS
FANG, FF
STILES, PJ
PHYSICAL REVIEW B, 1983, 28 (12): : 6992 - 6995
[7] ANDERSON LOCALIZATION IN SILICON MOS INVERSION-LAYERS IN A STRONGLY LOCALIZED REGIME
HOSHI, N
KAWAJI, S
SURFACE SCIENCE, 1982, 113 (1-3) : 189 - 193
[8] RESISTIVITY MEASUREMENTS IN SILICON INVERSION-LAYERS
GOMBOS, G
MOSTAFA, MM
ALSHARABY, H
ACTA PHYSICA HUNGARICA, 1987, 62 (01) : 15 - 18
[9] INVERSION-LAYERS IN SILICON ON INSULATING SUBSTRATES
ENGLERT, T
LANDWEHR, G
PONTCHARRA, J
DORDA, G
SURFACE SCIENCE, 1980, 98 (1-3) : 427 - 436
[10] DETERMINATION OF SPATIAL POTENTIAL FLUCTUATIONS IN SI AND GAAS INVERSION-LAYERS BY WEAK LOCALIZATION
MENSZ, PM
WHEELER, RG
FOXON, CT
HARRIS, JJ
APPLIED PHYSICS LETTERS, 1987, 50 (10) : 603 - 605

← 1 2 3 4 5 →