LATERAL-SUPERLATTICE EFFECT ON WEAK LOCALIZATION IN SILICON INVERSION-LAYERS

被引：3

作者：

GAO, JR ^{[1
]}

DEGRAAF, C ^{[1
]}

SCHUSSLER, AS ^{[1
]}

CARO, J ^{[1
]}

RADELAAR, S ^{[1
]}

HEYERS, K ^{[1
]}

机构：

[1] RHEIN WESTFAL TH AACHEN,INST SEMICOND ELECTR,W-5100 AACHEN,GERMANY

来源：

PHYSICAL REVIEW B | 1992年 / 46卷 / 15期

关键词：

D O I：

10.1103/PhysRevB.46.9885

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

It is found that the magnitude of the weak-localization (WL) correction to the conductance in a lateral superlattice (LSL) differs considerably from that in a homogeneous two-dimensional electron gas. The LSL effects were observed by measuring the dependence of the magnetoconductance on the strength of a modulated potential in silicon inversion layers. For parallel transport in a LSL the WL is enhanced, while it is reduced for perpendicular transport. This agrees with a recent theory for WL in a LSL. The effect is larger for stronger potential modulation and its maximum value deduced from the experiments is 2.8.

引用

页码：9885 / 9888

页数：4

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