REACTIVE DEPOSITION EPITAXIAL-GROWTH OF BETA-FESI2 FILM ON SI(111) - IN-SITU OBSERVATION BY REFLECTIVE HIGH-ENERGY ELECTRON-DIFFRACTION

被引：17

作者：

WANG, LW

LIN, CG

SHEN, QW

LIN, X

NI, RS

ZOU, SC

机构：

[1] State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Metallurgy, Chinese Academy of Sciences

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 25期

关键词：

D O I：

10.1063/1.113385

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Reactive deposition epitaxial growth of β-FeSi2 film on Si(111) has been studied by in situ observation of reflective high energy electron diffraction combined with ex situ Auger electron spectroscopy depth profile analysis. The direct phase formed at the top surface after iron coverage has been determined to be mixture Fe3Si and Fe5Si3, FeSi, and β-FeSi2, respectively, according to the results of different deposit temperature. Diffraction patterns as well as the depth profile for the Fe/Si ratio have been discussed.© 1995 American Institute of Physics.

引用

页码：3453 / 3455

页数：3

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