SINGLE-ELECTRON TUNNELING AND COULOMB CHARGING EFFECTS IN ASYMMETRIC DOUBLE-BARRIER RESONANT-TUNNELING DIODES

被引：65

作者：

TEWORDT, M ^{[1
]}

MARTINMORENO, L ^{[1
]}

NICHOLLS, JT ^{[1
]}

PEPPER, M ^{[1
]}

KELLY, MJ ^{[1
]}

LAW, VJ ^{[1
]}

RITCHIE, DA ^{[1
]}

FROST, JEF ^{[1
]}

JONES, GAC ^{[1
]}

机构：

[1] TOSHIBA CAMBRIDGE RES CTR,CAMBRIDGE CB4 4WE,ENGLAND

来源：

PHYSICAL REVIEW B | 1992年 / 45卷 / 24期

关键词：

D O I：

10.1103/PhysRevB.45.14407

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Resonant tunneling is studied in an ultrasmall asymmetric GaAs-AlxGa1-xAs double-barrier diode at low temperatures. In reverse bias, spikelike current-voltage characteristics are observed and assigned to electrons tunneling from zero-dimensional (OD) states in the accumulation layer to OD states in the well. The OD-OD tunneling reflects the single-electron spectrum without Coulomb charging effects. In forward bias, steplike current-voltage characteristics are observed and ascribed to tunneling from one-dimensional subbands in the emitter contacts through OD states in the well, accompanied by Coulomb charging effects. A moderate magnetic field (B almost-equal-to 4 T) parallel to the current improves the flatness of the plateaus.

引用

页码：14407 / 14410

页数：4

共 50 条

[21] RESONANT-TUNNELING IN LATERALLY CONFINED DOUBLE-BARRIER STRUCTURES
GOBATO, YG
BERROIR, JM
GULDNER, Y
SOLID STATE COMMUNICATIONS, 1993, 87 (06) : 513 - 515
[22] NONLINEAR RESONANT-TUNNELING THROUGH DOUBLE-BARRIER STRUCTURES
DIEZ, E
DOMINGUEZADAME, F
SANCHEZ, A
PHYSICS LETTERS A, 1995, 198 (5-6) : 403 - 406
[23] STABILITY CONSIDERATIONS FOR A DOUBLE-BARRIER RESONANT-TUNNELING DIODE
JOOSTEN, HP
NOTEBORN, HJMF
KASKI, K
LENSTRA, D
SUPERLATTICES AND MICROSTRUCTURES, 1992, 12 (01) : 53 - 56
[24] PLASMON ASSISTED RESONANT-TUNNELING IN A DOUBLE-BARRIER HETEROSTRUCTURE
ZHANG, C
LERCH, MLF
MARTIN, AD
SIMMONDS, PE
EAVES, L
PHYSICAL REVIEW LETTERS, 1994, 72 (21) : 3397 - 3400
[25] CURRENT BISTABILITY IN DOUBLE-BARRIER RESONANT-TUNNELING DEVICES
FOSTER, TJ
LEADBEATER, ML
EAVES, L
HENINI, M
HUGHES, OH
PAYLING, CA
SHEARD, FW
SIMMONDS, PE
TOOMBS, GA
HILL, G
PATE, MA
PHYSICAL REVIEW B, 1989, 39 (09): : 6205 - 6207
[26] Lateral current density fronts in asymmetric double-barrier resonant-tunneling structures
Rodin, P. (rodin@physik.tu-berlin.de), 1600, American Institute of Physics Inc. (93):
[27] EFFECTS OF AN IMPURITY SHEET IN THE WELL ON RESONANT-TUNNELING IN DOUBLE-BARRIER STRUCTURES
XU, HZ
CHEN, GH
JOURNAL OF APPLIED PHYSICS, 1995, 77 (10) : 5478 - 5480
[28] PIEZOELECTRIC EFFECTS IN (001)-ORIENTED DOUBLE-BARRIER RESONANT-TUNNELING STRUCTURES
CONG, L
ALBRECHT, JD
NATHAN, MI
RUDEN, PP
SMITH, DL
APPLIED PHYSICS LETTERS, 1995, 66 (11) : 1358 - 1360
[29] Single-electron transport in small resonant-tunneling diodes with various barrier-thickness asymmetries
Schmidt, T
Haug, RJ
VonKlitzing, K
Forster, A
Luth, H
PHYSICAL REVIEW B, 1997, 55 (04): : 2230 - 2236
[30] EQUIVALENCE BETWEEN RESONANT TUNNELING AND SEQUENTIAL TUNNELING IN DOUBLE-BARRIER DIODES
WEIL, T
VINTER, B
APPLIED PHYSICS LETTERS, 1987, 50 (18) : 1281 - 1283

← 1 2 3 4 5 →