PLASMON ASSISTED RESONANT-TUNNELING IN A DOUBLE-BARRIER HETEROSTRUCTURE

被引：33

作者：

ZHANG, C ^{[1
]}

LERCH, MLF ^{[1
]}

MARTIN, AD ^{[1
]}

SIMMONDS, PE ^{[1
]}

EAVES, L ^{[1
]}

机构：

[1] UNIV NOTTINGHAM,DEPT PHYS,NOTTINGHAM NG7 2RD,ENGLAND

来源：

PHYSICAL REVIEW LETTERS | 1994年 / 72卷 / 21期

关键词：

D O I：

10.1103/PhysRevLett.72.3397

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

When a double barrier semiconductor structure is biased near a tunneling resonance, charge can accumulate in the quantum well. Coupling between this two dimensional electron gas and the tunneling current is investigated. Experimental data taken inside a region of apparent bistability in one device reveal a satellite on the high energy side of the current resonance in the I(V) characteristic. A theoretical model based on the many-body transfer Hamiltonian formalism shows that a plasmon excitation has a remarkably similar structure. Magnetic field data support the plasmon satellite interpretation.

引用

页码：3397 / 3400

页数：4

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