MESA SURFACE RECOMBINATION CURRENT IN ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS WITH AN EMITTER BASE EMITTER STRUCTURE

被引：0
|
作者：
LIU, W
HARRIS, JS
机构：
[1] STANFORD UNIV,SOLID STATE LAB,STANFORD,CA 94305
[2] TEXAS INSTRUMENTS INC,CENT RES LABS,DALLAS,TX 75265
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1992年 / 10卷 / 04期
关键词：
D O I：
10.1116/1.585857
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An analytical solution for the minority carrier concentration in the base region of an emitter-base-emitter contact topology heterojunction bipolar transistor has been developed. This solution is used to calculate various base current components, including the mesa surface recombination current which is geometry dependent. This mesa surface recombination current affects the efficiency with which the injected carriers from emitter traverse the base and reach the collector. The significance of this mesa surface recombination current is evaluated and the current gain is calculated as a function of device geometry and base doping level. In particular, the effect of this mesa surface recombination is examined for devices specifically designed for high frequency applications. The emitter crowding is also analyzed quantitatively and its effects on device current gain are discussed.
引用
收藏
页码：1285 / 1296
页数：12
相关论文
共 50 条
  • [21] STUDIES OF LOW-SURFACE 2-KT RECOMBINATION CURRENT OF THE EMITTER-BASE HETEROJUNCTION OF HETEROJUNCTION BIPOLAR-TRANSISTORS
    WU, CC
    TING, JL
    LEE, SC
    LIN, HH
    JOURNAL OF APPLIED PHYSICS, 1990, 68 (04) : 1766 - 1771
  • [22] NUMERICAL STUDY ON THE INJECTION PERFORMANCE OF ALGAAS GAAS ABRUPT EMITTER HETEROJUNCTION BIPOLAR-TRANSISTORS
    YANG, KH
    EAST, JR
    HADDAD, GI
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (02) : 138 - 147
  • [23] COMPARISON OF GAINP/GAAS HETEROSTRUCTURE-EMITTER BIPOLAR-TRANSISTORS AND HETEROJUNCTION BIPOLAR-TRANSISTORS
    YANG, YF
    HSU, CC
    YANG, ES
    CHEN, YK
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1995, 42 (07) : 1210 - 1215
  • [24] PLANARIZATION OF EMITTER BASE STRUCTURE OF HETEROJUNCTION BIPOLAR-TRANSISTORS BY DOPING SELECTIVE BASE CONTACT AND NONALLOYED EMITTER CONTACT
    GOOSSEN, KW
    KUO, TY
    CUNNINGHAM, JE
    JAN, WY
    REN, F
    FONSTAD, CG
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1991, 38 (11) : 2423 - 2426
  • [25] GAAS/ALGAAS HETEROJUNCTION EMITTER-DOWN BIPOLAR-TRANSISTORS FABRICATED ON GAAS-ON-SI SUBSTRATE
    TRAN, LT
    LEE, JW
    SHICHIJO, H
    YUAN, HT
    IEEE ELECTRON DEVICE LETTERS, 1987, 8 (02) : 50 - 52
  • [26] EMITTER EXCESS RESISTANCE IN GAALAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS
    CAMPS, T
    MARTY, A
    TASSELLI, J
    CAZARRE, A
    BAILBE, JP
    SOLID-STATE ELECTRONICS, 1994, 37 (12) : 1907 - 1911
  • [27] HIGH-SPEED PERFORMANCE OF ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS WITH NONALLOYED EMITTER CONTACTS
    NAGATA, K
    NAKAJIMA, O
    YAMAUCHI, Y
    ITO, H
    NITTONO, T
    ISHIBASHI, T
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (11) : 2369 - 2369
  • [28] OBSERVATION OF THE SURFACE RECOMBINATION CURRENT WITH AN IDEALITY FACTOR OF UNITY IN ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS
    MOCHIZUKI, K
    MASUDA, H
    KAWATA, M
    MITANI, K
    KUSANO, C
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1991, 30 (2B): : L266 - L268
  • [29] THERMAL-STABILITY ANALYSIS OF ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS WITH MULTIPLE EMITTER FINGERS
    LIOU, LL
    BAYRAKTAROGLU, B
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (05) : 629 - 636
  • [30] RECOMBINATION CURRENT REDUCTION IN ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS WITH POLYIMIDE DEPOSITION
    KALINGAMUDALI, SRD
    WISMAYER, AC
    WOODS, RC
    SOLID-STATE ELECTRONICS, 1994, 37 (12) : 1977 - 1982
12345