RELAXATION PHENOMENA ASSOCIATED WITH RADIATION-INDUCED TRAPPED CHARGE IN AL2O3 MOS DEVICES

被引：3
|
作者：
MICHELETTI, FB
KOLONDRA, F
机构：
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1971年 / NS18卷 / 06期
关键词：
D O I：
10.1109/TNS.1971.4326424
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：131 / +
页数：1
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