RELAXATION PHENOMENA ASSOCIATED WITH RADIATION-INDUCED TRAPPED CHARGE IN AL2O3 MOS DEVICES

被引：3

|

作者：

MICHELETTI, FB

KOLONDRA, F

机构：

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1971年 / NS18卷 / 06期

关键词：

D O I：

10.1109/TNS.1971.4326424

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：131 / +

页数：1

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