HIGH-TEMPERATURE, HIGH-RATE HOMOEPITAXIAL SYNTHESIS OF DIAMOND IN A THERMAL PLASMA REACTOR

被引：6
|
作者：
SNAIL, KA [1 ]
MARKS, CM [1 ]
LU, ZP [1 ]
HEBERLEIN, J [1 ]
PFENDER, E [1 ]
机构：
[1] UNIV MINNESOTA,DEPT MECH ENGN,MINNEAPOLIS,MN 55455
来源：
MATERIALS LETTERS | 1991年 / 12卷 / 05期
关键词：
D O I：
10.1016/0167-577X(91)90105-F
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Millimeter sized, facetted diamond crystals have been grown epitaxially at temperatures of 1200-1400-degrees-C (+/- 100-degrees-C) in a thermal plasma reactor, using millimeter sized, cylindrical seed crystals. Growth rates of 100-220-mu-m/h were measured; these are the highest ever reported for the epitaxial synthesis of diamond at low pressures.
引用
收藏
页码：301 / 305
页数：5
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