CHANNELING EFFECTS AND DEFECT ACCUMULATION IN ION-IMPLANTATION

In channeling implantation range and damage distributions and the dechanneling probability are strongly influenced by lattice vibrations, by a thin amorphous surface layer, by radiation-induced defect production during ion bombardment and by pre-existing defects. This is demonstrated in the example of [100] channeling implantation of 80 keV boron into silicon using our binary collision code Crystal-TRIM. The comparison with experimental data shows that the simple model of defect accumulation used is sufficient to simulate the dose dependence of the range profiles. However, the simulations do not produce realistic damage distributions for high-dose implantation.