NONDESTRUCTIVE ANALYSIS BY SPECTROSCOPIC ELLIPSOMETRY

被引：0
|
作者：
JANS, JC
机构：
来源：
PHILIPS JOURNAL OF RESEARCH | 1993年 / 47卷 / 3-5期
关键词：
FILM THICKNESS; MULTILAYER OPTICAL MODELING; NONDESTRUCTIVE TESTING; OPTICAL CONSTANTS; SPECTROSCOPIC ELLIPSOMETRY;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A concise review on the basic principles and methodology used in spectroscopic ellipsometry analysis is presented. The technique is truly non-destructive and allows optical and structural parameters to be accessed in a wide range of problems in materials research. Several recent examples are presented. These include the structural analysis of high-dose oxygen-implanted silicon substrates, the determination of the optical constants of thin ZnSe films on c-GaAs grown by molecular beam epitaxy and the determination of the Ge content in Si1-xGex alloy films on c-Si grown by chemical vapour deposition.
引用
收藏
页码：347 / 360
页数：14
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