NONDESTRUCTIVE CHARACTERIZATION OF SILICON-ON-INSULATOR STRUCTURES USING INFRARED SPECTROSCOPIC ELLIPSOMETRY

被引：5
|
作者：
FERRIEU, F
DUTARTRE, D
机构：
[1] Centre National d' Études des Télécommunications, 38243 Meylan
来源：
JOURNAL OF APPLIED PHYSICS | 1990年 / 68卷 / 11期
关键词：
D O I：
10.1063/1.346952
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Nondestructive characterization of a large variety of silicon-on-insulator structures has been performed by infrared spectroscopic ellipsometry (IRSE). This technique is shown to be applicable over very wide ranges of Si and SiO2 thicknesses and thus is more adapted than visible reflectometry or spectroscopic ellipsometry when relatively thick films are analyzed. In addition, IRSE provides information on any possible interface roughness and thickness homogeneity of the layers.
引用
收藏
页码：5810 / 5813
页数：4
相关论文
共 50 条
  • [1] NONDESTRUCTIVE CHARACTERIZATION OF NITROGEN-IMPLANTED SILICON-ON-INSULATOR STRUCTURES BY SPECTROSCOPIC ELLIPSOMETRY
    FRIED, M
    LOHNER, T
    DENIJS, JMM
    VANSILFHOUT, A
    HANEKAMP, LJ
    LACZIK, Z
    KHANH, NQ
    GYULAI, J
    [J]. JOURNAL OF APPLIED PHYSICS, 1989, 66 (10) : 5052 - 5057
  • [2] SPECTROSCOPIC ELLIPSOMETRY CHARACTERIZATION OF SILICON-ON-INSULATOR MATERIALS
    VANHELLEMONT, J
    MAES, HE
    [J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1990, 5 (02): : 301 - 307
  • [3] Spectroscopic ellipsometry characterization of ultrathin silicon-on-insulator films
    Price, J.
    Diebold, A. C.
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2006, 24 (04): : 2156 - 2159
  • [4] NON-DESTRUCTIVE CHARACTERIZATION OF NITROGEN-IMPLANTED SILICON-ON-INSULATOR STRUCTURES BY SPECTROSCOPIC ELLIPSOMETRY
    FRIED, M
    LOHNER, T
    DENIJS, JMM
    VANSILFHOUT, A
    HANEKAMP, LJ
    KHANH, NQ
    LACZIK, Z
    GYULAI, J
    [J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1989, 2 (1-3): : 131 - 137
  • [5] NONDESTRUCTIVE CHARACTERIZATION OF OXYGEN-ION-IMPLANTED SILICON-ON-INSULATOR USING MULTIPLE-ANGLE ELLIPSOMETRY
    DUTTA, P
    CANDELA, GA
    CHANDLERHOROWITZ, D
    MARCHIANDO, JF
    PECKERAR, MC
    [J]. JOURNAL OF APPLIED PHYSICS, 1988, 64 (05) : 2754 - 2756
  • [6] SPECTROSCOPIC ELLIPSOMETRY OF BONDED SILICON-ON-INSULATOR STRUCTURES WITH OXIDE-NITRIDE-OXIDE LAYERS
    ELGHAZZAWI, MEM
    SAITOH, T
    [J]. OPTICAL ENGINEERING, 1995, 34 (02) : 453 - 459
  • [7] CHARACTERIZATION OF THE SILICON-ON-INSULATOR MATERIAL FORMED BY HIGH-DOSE OXYGEN IMPLANTATION USING SPECTROSCOPIC ELLIPSOMETRY
    FERRIEU, F
    VU, DP
    DANTERROCHES, C
    OBERLIN, JC
    MAILLET, S
    GROB, JJ
    [J]. JOURNAL OF APPLIED PHYSICS, 1987, 62 (08) : 3458 - 3461
  • [8] Characterization of structural quality of bonded Silicon-On-Insulator wafers by spectroscopic ellipsometry and Raman spectroscopy
    Nguyen, NV
    Maslar, JE
    Kim, JY
    Han, JP
    Park, JW
    Chandler-Horowitz, D
    Vogel, EM
    [J]. HIGH-MOBILITY GROUP-IV MATERIALS AND DEVICES, 2004, 809 : 127 - 132
  • [9] CHARACTERIZATION OF SILICON-ON-INSULATOR MULTILAYERS USING EX-SITU SPECTROSCOPIC ELLIPSOMETRY AND IN-SITU MONOCHROMATIC ELLIPSOMETRY DURING PLASMA-ETCHING
    GREEF, R
    GRAY, DE
    DARTNELL, NJ
    ZHU, J
    LYNCH, S
    CREAN, GM
    [J]. THIN SOLID FILMS, 1993, 233 (1-2) : 214 - 217
  • [10] Nondestructive evaluation of interfaces in bonded silicon-on-insulator structures using the picosecond ultrasonics technique
    Hao, HY
    Maris, HJ
    Sadana, DK
    [J]. ELECTROCHEMICAL AND SOLID STATE LETTERS, 1998, 1 (01) : 54 - 55
12345