GROWTH OF SILICON EPITAXY OVER ION-IMPLANTED BURIED LAYERS

被引：0
|
作者：
KANNAN, VC [1 ]
ROPER, G [1 ]
机构：
[1] TEKTRONIX INC,BEAVERTON,OR 97005
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1979年 / 126卷 / 03期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：C120 / C120
页数：1
相关论文
共 50 条
  • [31] CRYSTALLIZATION OF ION-IMPLANTED SILICON LAYERS BY THE NANOSECOND LASER-PULSES
    ROMANOV, SI
    KACHURIN, GA
    SMIRNOV, LS
    KHAIBULLIN, IB
    SHTYRKOV, EI
    BAJAZITOV, RM
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1980, 48 (1-4): : 191 - 194
  • [32] FORMATION AND NONDESTRUCTIVE CHARACTERIZATION OF ION-IMPLANTED SILICON-ON-INSULATOR LAYERS
    NARAYAN, J
    KIM, SY
    VEDAM, K
    MANUKONDA, R
    APPLIED PHYSICS LETTERS, 1987, 51 (05) : 343 - 345
  • [33] RBS and optical studies of ion-implanted amorphous silicon carbide layers
    Romanek, J
    Kobzev, AP
    Kulik, M
    Tsvetkova, T
    Zuk, J
    VACUUM, 2003, 70 (2-3) : 457 - 465
  • [34] STRUCTURAL AND ELECTRICAL PROFILES FOR DOUBLE DAMAGE LAYERS IN ION-IMPLANTED SILICON
    SADANA, DK
    FLETCHER, J
    BOOKER, GR
    ELECTRONICS LETTERS, 1977, 13 (21) : 632 - 633
  • [35] Deuterium interactions with ion-implanted SiO2 layers in silicon
    1600, (73):
  • [36] MICROMAGNETICS OF ION-IMPLANTED GARNET LAYERS
    HUBERT, A
    IEEE TRANSACTIONS ON MAGNETICS, 1984, 20 (05) : 1816 - 1821
  • [37] CARBON CONTAMINATION OF ION-IMPLANTED LAYERS
    KRAL, J
    ZEMEK, J
    VACUUM, 1986, 36 (7-9) : 555 - 557
  • [38] LUMINESCENCE OF ION-IMPLANTED LAYERS IN ZNO
    PIERCE, BJ
    HENGEHOLD, RL
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1975, 20 (03): : 376 - 376
  • [39] ATHERMAL EFFECTS IN ION-IMPLANTED LAYERS
    GYULAI, J
    RYSSEL, H
    BIRO, LP
    FREY, L
    KUKI, A
    KORMANY, T
    SERFOZO, G
    KHANH, NQ
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1994, 127 (3-4): : 397 - 404
  • [40] SOLID-PHASE-EPITAXIAL GROWTH IN ION-IMPLANTED SILICON
    NARAYAN, J
    HOLLAND, OW
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1982, 73 (01): : 225 - 236
12345