CARBON CONTAMINATION OF ION-IMPLANTED LAYERS

被引：11
|
作者：
KRAL, J [1 ]
ZEMEK, J [1 ]
机构：
[1] CZECHOSLOVAK ACAD SCI, INST PHYS, CS-18040 PRAGUE 8, CZECHOSLOVAKIA
来源：
VACUUM | 1986年 / 36卷 / 7-9期
关键词：
D O I：
10.1016/0042-207X(86)90247-2
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：555 / 557
页数：3
相关论文
共 50 条
  • [1] DESIGN OF ION-IMPLANTED HYDROGEN CONTAMINATION BARRIER LAYERS FOR STEEL
    ZAMPRONIO, MA
    FASSINI, FD
    DEMIRANDA, PEV
    [J]. SURFACE & COATINGS TECHNOLOGY, 1995, 70 (2-3): : 203 - 209
  • [2] MICROMAGNETICS OF ION-IMPLANTED GARNET LAYERS
    HUBERT, A
    [J]. IEEE TRANSACTIONS ON MAGNETICS, 1984, 20 (05) : 1816 - 1821
  • [3] LUMINESCENCE OF ION-IMPLANTED LAYERS IN ZNO
    PIERCE, BJ
    HENGEHOLD, RL
    [J]. BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1975, 20 (03): : 376 - 376
  • [4] ATHERMAL EFFECTS IN ION-IMPLANTED LAYERS
    GYULAI, J
    RYSSEL, H
    BIRO, LP
    FREY, L
    KUKI, A
    KORMANY, T
    SERFOZO, G
    KHANH, NQ
    [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1994, 127 (3-4): : 397 - 404
  • [5] NANOPHASE CERAMICS, MEMBRANES AND ION-IMPLANTED LAYERS
    BURGGRAAF, AJ
    KEISER, K
    VANHASSEL, BA
    [J]. SURFACES AND INTERFACES OF CERAMIC MATERIALS, 1989, 173 : 705 - 724
  • [6] Optical properties of ion-implanted polymer layers
    I. P. Kozlov
    V. B. Odzhaev
    I. A. Karpovich
    V. N. Popok
    D. V. Sviridov
    [J]. Journal of Applied Spectroscopy, 1998, 65 (3) : 390 - 394
  • [7] HALL MEASUREMENTS OF ION-IMPLANTED LAYERS IN SILICON
    CLARK, AH
    MANCHESTER, KE
    [J]. TRANSACTIONS OF THE METALLURGICAL SOCIETY OF AIME, 1968, 242 (06): : 1173 - +
  • [8] Characterization Techniques for Ion-Implanted Layers in Silicon
    Polignano, Maria Luisa
    Codegoni, Davide
    Galbiati, Amos
    Grasso, Salvatore
    Mica, Isabella
    Basa, Peter
    Pongracz, Anita
    Kiss, Zoltan Tamas
    Nadudvari, Gyorgy
    [J]. 2018 22ND INTERNATIONAL CONFERENCE ON ION IMPLANTATION TECHNOLOGY (IIT 2018), 2018, : 144 - 152
  • [9] MOS FREQUENCY SOARS WITH ION-IMPLANTED LAYERS
    SHANNON, JM
    STEPHEN, J
    FREEMAN, JH
    [J]. ELECTRONICS, 1969, 42 (03): : 96 - &
  • [10] AMORPHIZATION AND RECRYSTALLIZATION OF INSB ION-IMPLANTED LAYERS
    CHERNYSHEVA, NY
    KACHURIN, GA
    BOGATYRIOV, VA
    [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1978, 47 (01): : K5 - &
12345