PLASMA-ETCHING OF SILICON STUDIED BY IN-SITU LASER-INDUCED DESORPTION AND X-RAY PHOTOELECTRON-SPECTROSCOPY

被引：0
|
作者：
CHENG, CC [1 ]
GUINN, KV [1 ]
HERMAN, IP [1 ]
DONNELLY, VM [1 ]
机构：
[1] AT&T BELL LABS,MURRAY HILL,NJ 07974
来源：
ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY | 1994年 / 208卷
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中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
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页码：103 / PHYS
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