PLASMA-ETCHING OF SILICON STUDIED BY IN-SITU LASER-INDUCED DESORPTION AND X-RAY PHOTOELECTRON-SPECTROSCOPY

被引：0

作者：

CHENG, CC ^{[1
]}

GUINN, KV ^{[1
]}

HERMAN, IP ^{[1
]}

DONNELLY, VM ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY | 1994年 / 208卷

关键词：

D O I：

暂无

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

页码：103 / PHYS

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