共 50 条
- [41] PHOTO-LUMINESCENCE OF TELLURIUM-DOPED GALLIUM-ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (05): : 579 - 580
- [42] PRESSURE EFFECT ON THE LUMINESCENCE FROM THE DEEP LEVEL IN GALLIUM-ARSENIDE PHYSICAL REVIEW B, 1986, 33 (08): : 5965 - 5968
- [43] Inhomogeneity of luminescence properties of gallium arsenide with various concentration of majority carriers KRISTALLOGRAFIYA, 1996, 41 (06): : 1063 - 1065
- [48] LINEAR POLARIZATION OF HOT LUMINESCENCE OF SEMICONDUCTORS WITH GALLIUM ARSENIDE BAND STRUCTURE. 1977, 11 (08): : 868 - 873