INJECTION LUMINESCENCE IN GALLIUM ARSENIDE

被引：0
|
作者：
PANKOVE, JI
MASSOULIE, MJ
机构：
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1962年 / 109卷 / 03期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：C67 / C67
页数：1
相关论文
共 50 条
  • [31] STUDY OF A MULTIBEAM GALLIUM-ARSENIDE INJECTION LASER AMPLIFIER
    KURBATOV, LN
    BYSTROVA, LV
    SHAKHIDZHANOV, SS
    KISELEV, AA
    KATAYEV, AG
    DEMIDOV, YP
    RADIO ENGINEERING AND ELECTRONIC PHYSICS-USSR, 1971, 16 (04): : 702 - +
  • [32] PHOTO-LUMINESCENCE OF GALLIUM-ARSENIDE DOPED BY SILICON IMPLANTATION
    VOLTSIT, VV
    DRAZHAN, AV
    ZUEV, VA
    IVANIICHUK, MT
    KORBUTYAK, DV
    LITOVCHENKO, VG
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1978, 12 (10): : 1211 - 1213
  • [33] Spatially resolved spin-injection probability for gallium arsenide
    LaBella, VP
    Bullock, DW
    Ding, Z
    Emery, C
    Venkatesan, A
    Oliver, WF
    Salamo, GJ
    Thibado, PM
    Mortazavi, M
    SCIENCE, 2001, 292 (5521) : 1518 - 1521
  • [34] HYSTERESIS OF RADIATION POWER OF GALLIUM-ARSENIDE INJECTION LASERS
    MOROZOV, VN
    NIKITIN, VV
    SAMOILOV, VD
    JETP LETTERS-USSR, 1968, 8 (08): : 254 - &
  • [35] On the origin of the luminescence band with hνm=1.5133 eV in gallium arsenide
    Glinchuk, KD
    Litovchenko, NM
    Prokhorovich, AV
    Stril'chuk, ON
    SEMICONDUCTORS, 2001, 35 (05) : 516 - 519
  • [36] INFLUENCE OF IRRADIATION WITH FAST-NEUTRONS ON THE LUMINESCENCE OF GALLIUM-ARSENIDE
    VINNIK, EV
    GLINCHUK, KD
    GUROSHEV, VI
    PROKHOROVICH, AV
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1991, 25 (01): : 48 - 51
  • [37] Gold Localized Surface Plasmon Enhanced Luminescence Characteristics of Gallium Arsenide
    Ma Guang-hui
    Zhang Jia-bin
    Wang Xiao-yi
    Shi Lin-lin
    Jin Liang
    Li Yang
    Xu Ying-tian
    Zhang He
    ACTA PHOTONICA SINICA, 2019, 48 (05)
  • [38] ZEEMAN SPECTROSCOPY OF LUMINESCENCE FROM VANADIUM DOPED GALLIUM-ARSENIDE
    ARMELLES, G
    BARRAU, J
    THEBAULT, D
    BROUSSEAU, M
    JOURNAL DE PHYSIQUE, 1984, 45 (11): : 1795 - 1800
  • [39] On the origin of the luminescence band with hνm=1.5133 eV in gallium arsenide
    K. D. Glinchuk
    N. M. Litovchenko
    A. V. Prokhorovich
    O. N. Stril’chuk
    Semiconductors, 2001, 35 : 516 - 519
  • [40] INFLUENCE OF COMPENSATION ON THE EDGE LUMINESCENCE OF HEAVILY DOPED GALLIUM-ARSENIDE
    ARNAUDOV, BG
    DOMANEVSKII, DS
    EVTIMOVA, SK
    ZHOKHOVETS, SV
    PROKOPENYA, MV
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1983, 17 (04): : 378 - 380
12345