ELECTRONIC-STRUCTURE OF A SHALLOW ACCEPTOR CONFINED IN A GAAS/ALXGA1-XAS QUANTUM-WELL

被引：27
|
作者：
HOLTZ, PO [1 ]
ZHAO, QX [1 ]
MONEMAR, B [1 ]
SUNDARAM, M [1 ]
MERZ, JL [1 ]
GOSSARD, AC [1 ]
机构：
[1] UNIV CALIF SANTA BARBARA,QUEST,SANTA BARBARA,CA 93106
来源：
PHYSICAL REVIEW B | 1993年 / 47卷 / 23期
关键词：
D O I：
10.1103/PhysRevB.47.15675
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The electronic structure of a shallow neutral acceptor and its bound exciton (BE) in GaAs/AlxGa1-xAs quantum wells has been investigated by optical spectroscopy. The heavy-hole and light-hole acceptor ground states are both observed in photoluminescence excitation (PLE) spectra. This interpretation is supported by magnetic-field and polarization-dependent PLE experiments. The effective g value for the acceptor BE emission varies strongly with the degree of confinement. Several BE states are theoretically predicted and observed in PLE spectra with the J = 5/2 state at lowest energy, as in bulk GaAs.
引用
收藏
页码：15675 / 15678
页数：4
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