ELECTRONIC-STRUCTURE OF A SHALLOW ACCEPTOR CONFINED IN A GAAS/ALXGA1-XAS QUANTUM-WELL

被引：27

作者：

HOLTZ, PO ^{[1
]}

ZHAO, QX ^{[1
]}

MONEMAR, B ^{[1
]}

SUNDARAM, M ^{[1
]}

MERZ, JL ^{[1
]}

GOSSARD, AC ^{[1
]}

机构：

[1] UNIV CALIF SANTA BARBARA,QUEST,SANTA BARBARA,CA 93106

来源：

PHYSICAL REVIEW B | 1993年 / 47卷 / 23期

关键词：

D O I：

10.1103/PhysRevB.47.15675

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The electronic structure of a shallow neutral acceptor and its bound exciton (BE) in GaAs/AlxGa1-xAs quantum wells has been investigated by optical spectroscopy. The heavy-hole and light-hole acceptor ground states are both observed in photoluminescence excitation (PLE) spectra. This interpretation is supported by magnetic-field and polarization-dependent PLE experiments. The effective g value for the acceptor BE emission varies strongly with the degree of confinement. Several BE states are theoretically predicted and observed in PLE spectra with the J = 5/2 state at lowest energy, as in bulk GaAs.

引用

页码：15675 / 15678

页数：4

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