A GALLIUM-ARSENIDE BALLISTIC TRANSISTOR

被引：4

作者：

NATHAN, MI

HEIBLUM, M

机构：

来源：

关键词：

D O I：

10.1109/MSPEC.1986.6371000

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

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页码：45 / 47

页数：3

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[31] EPITAXIAL GALLIUM-ARSENIDE GROWTH
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