ION-IMPLANTED BIPOLAR TRANSISTOR CARRIER CONCENTRATION PROFILES

被引：10
|
作者：
BARNOSKI, MK [1 ]
LOPER, DD [1 ]
机构：
[1] HUGHES RES LABS,MALIBU,CA 90265
来源：
SOLID-STATE ELECTRONICS | 1973年 / 16卷 / 04期
关键词：
D O I：
10.1016/0038-1101(73)90180-9
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：433 / &
相关论文
共 50 条
  • [41] Vacancy and interstitial depth profiles in ion-implanted silicon
    Lévêque, P
    Nielsen, HK
    Pellegrino, P
    Hallén, A
    Svensson, BG
    Kuznetsov, AY
    Wong-Leung, J
    Jagadish, C
    Privitera, V
    JOURNAL OF APPLIED PHYSICS, 2003, 93 (02) : 871 - 877
  • [42] BERYLLIUM AND SULFUR ION-IMPLANTED PROFILES IN GAAS+
    COMAS, J
    PLEW, L
    JOURNAL OF ELECTRONIC MATERIALS, 1976, 5 (02) : 209 - 221
  • [43] Extracting defect profiles in ion-implanted GaN from ion channeling
    Cacador, A.
    Jozwik, P.
    Magalhaes, S.
    Marques, J. G.
    Wendler, E.
    Lorenz, K.
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2023, 166
  • [44] ION-IMPLANTED BIPOLAR SILICON INTEGRATED-CIRCUIT PROCESS
    SANDERS, IR
    MICROELECTRONICS AND RELIABILITY, 1977, 16 (01): : 75 - 80
  • [45] SIDEWALL PENETRATION OF DISLOCATIONS IN ION-IMPLANTED BIPOLAR-TRANSISTORS
    KOJI, T
    TSENG, WF
    MAYER, JW
    APPLIED PHYSICS LETTERS, 1978, 32 (11) : 749 - 751
  • [46] AN OVERVIEW OF ION-IMPLANTED OPTICAL WAVE-GUIDE PROFILES
    TOWNSEND, PD
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1990, 46 (1-4): : 18 - 25
  • [47] BIPOLAR-TRANSISTOR WITH ION-IMPLANTED, RAPID THERMAL ANNEALED BASE AND SEMI-INSULATING POLYCRYSTALLINE SILICON EMITTER
    OZGUZ, VH
    POSTHILL, JB
    WORTMAN, JJ
    LITTLEJOHN, MA
    JOURNAL OF APPLIED PHYSICS, 1988, 63 (08) : 2831 - 2838
  • [48] MICROHARDNESS AND NITROGEN PROFILES IN ION-IMPLANTED TUNGSTEN CARBIDE AND STEELS
    DEARNALEY, G
    MINTER, FJ
    ROL, PK
    SAINT, A
    THOMPSON, V
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 7-8 (MAR): : 188 - 194
  • [49] 50-GHZ SELF-ALIGNED SILICON BIPOLAR-TRANSISTORS WITH ION-IMPLANTED BASE PROFILES
    WARNOCK, J
    CRESSLER, JD
    JENKINS, KA
    CHEN, TC
    SUN, JYC
    TANG, DD
    IEEE ELECTRON DEVICE LETTERS, 1990, 11 (10) : 475 - 477
  • [50] CORRELATION BETWEEN STRUCTURAL AND ELECTRICAL PROFILES IN ION-IMPLANTED GAAS
    SADANA, DK
    BOOKER, GR
    SEALY, BJ
    STEPHENS, KG
    BADAWI, MH
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1980, 49 (1-3): : 183 - 186
12345