ION-IMPLANTED BIPOLAR TRANSISTOR CARRIER CONCENTRATION PROFILES

被引：10
|
作者：
BARNOSKI, MK [1 ]
LOPER, DD [1 ]
机构：
[1] HUGHES RES LABS,MALIBU,CA 90265
来源：
SOLID-STATE ELECTRONICS | 1973年 / 16卷 / 04期
关键词：
D O I：
10.1016/0038-1101(73)90180-9
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：433 / &
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