ION-IMPLANTED BIPOLAR TRANSISTOR CARRIER CONCENTRATION PROFILES

被引：10

作者：

BARNOSKI, MK ^{[1
]}

LOPER, DD ^{[1
]}

机构：

[1] HUGHES RES LABS,MALIBU,CA 90265

来源：

SOLID-STATE ELECTRONICS | 1973年 / 16卷 / 04期

关键词：

D O I：

10.1016/0038-1101(73)90180-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：433 / &

共 50 条

[1] CARRIER CONCENTRATION PROFILES OF ION-IMPLANTED SILICON
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[2] BIPOLAR-TRANSISTOR ACTION IN ION-IMPLANTED DIAMOND
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[8] Quantitative determination of depth carrier profiles in ion-implanted Gallium Nitride
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[9] ANOMALOUS CARRIER PROFILES IN BF-2(+)-ION-IMPLANTED SILICON
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[10] MOBILITY AND CARRIER-CONCENTRATION PROFILES OF P+ ION-IMPLANTED, ISOTHERMALLY ANNEALED SILICON-CRYSTALS
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