PHYSICAL MODELS FOR DEEP SUB-MICRON DEVICE SIMULATION

被引：3
|
作者：
SONODA, K
INOUE, Y
TANIGUCHI, K
HAMAGUCHI, C
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1989年 / 28卷 / 12期
关键词：
D O I：
10.1143/JJAP.28.L2313
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：L2313 / L2315
页数：3
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