共 50 条
- [41] USE OF SCANNING TUNNELING MICROSCOPY AND TRANSMISSION ELECTRON-MICROSCOPY TO QUANTIFY AND CHARACTERIZE COSI2 ROUGHNESS JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (04): : 1329 - 1334
- [42] IN-SITU STUDY OF EPITAXIAL COSI2/SI(111) BY BALLISTIC-ELECTRON-EMISSION MICROSCOPY JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (04): : 2629 - 2633
- [46] Island growth of Ge on Si(001) and CoSi2 on Si(111) studied with UHV electron microscopy JOURNAL OF ELECTRON MICROSCOPY, 1999, 48 : 1059 - 1066
- [47] Molecular-beam epitaxy of GexSi1-x films on Si(111): a high-energy electron diffraction study Physics of the Solid State, 38 (10):
- [48] STRUCTURAL STUDY OF COSI2/SI (001) AND (111) HETEROSTRUCTURES ON SILICON : ONE STEP FURTHER WITH SILICON, 1989, 160 : 247 - 252
- [49] MOLECULAR-BEAM EPITAXY OF MONOTYPE CRSI2 ON SI(111) SURFACE SCIENCE, 1989, 209 (03) : L139 - L143