INSITU STUDY OF THE MOLECULAR-BEAM EPITAXY OF COSI2 ON (111) SI BY TRANSMISSION ELECTRON-MICROSCOPY AND DIFFRACTION

被引:69
|
作者
GIBSON, JM
BATSTONE, JL
TUNG, RT
机构
关键词
D O I
10.1063/1.98882
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:45 / 47
页数:3
相关论文
共 50 条
  • [41] USE OF SCANNING TUNNELING MICROSCOPY AND TRANSMISSION ELECTRON-MICROSCOPY TO QUANTIFY AND CHARACTERIZE COSI2 ROUGHNESS
    CHAPMAN, RC
    SMITH, P
    ADU, RP
    MCGUIRE, GE
    CANOVAI, C
    OSBURN, C
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (04): : 1329 - 1334
  • [42] IN-SITU STUDY OF EPITAXIAL COSI2/SI(111) BY BALLISTIC-ELECTRON-EMISSION MICROSCOPY
    SIRRINGHAUS, H
    LEE, EY
    VONKANEL, H
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (04): : 2629 - 2633
  • [43] REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION TRANSMISSION ELECTRON-MICROSCOPY OBSERVATION OF GROWTH OF INAS ON GAAS(110) BY MOLECULAR-BEAM EPITAXY
    ZHANG, X
    PASHLEY, DW
    NEAVE, JH
    FAWCETT, PN
    ZHANG, J
    JOYCE, BA
    JOURNAL OF CRYSTAL GROWTH, 1993, 132 (1-2) : 331 - 334
  • [44] HIGH-RESOLUTION TRANSMISSION ELECTRON-MICROSCOPY OF THE COGA/GAAS HETEROSTRUCTURE GROWN BY MOLECULAR-BEAM EPITAXY
    WOO, YD
    KANG, TW
    KIM, TW
    LEE, JYU
    KUO, TC
    WANG, KL
    SOLID STATE COMMUNICATIONS, 1994, 91 (03) : 219 - 221
  • [45] INTERFACE STUDY OF OVERGROWTH OF SI ON NISI2/SI(111) BY MOLECULAR-BEAM EPITAXY
    WU, XH
    WU, ZQ
    PQELACOV, OP
    LAMIN, MA
    JOURNAL OF MATERIALS SCIENCE LETTERS, 1993, 12 (16) : 1330 - 1332
  • [46] Island growth of Ge on Si(001) and CoSi2 on Si(111) studied with UHV electron microscopy
    Ross, FM
    Tersoff, J
    Tromp, RM
    Reuter, MC
    Bennett, PA
    JOURNAL OF ELECTRON MICROSCOPY, 1999, 48 : 1059 - 1066
  • [47] Molecular-beam epitaxy of GexSi1-x films on Si(111): a high-energy electron diffraction study
    Markov, V. A.
    Pchelyakov, O. P.
    Physics of the Solid State, 38 (10):
  • [48] STRUCTURAL STUDY OF COSI2/SI (001) AND (111)
    BULLELIEUWMA, CWT
    VANOMMEN, AH
    VANIJZENDOORN, LJ
    HETEROSTRUCTURES ON SILICON : ONE STEP FURTHER WITH SILICON, 1989, 160 : 247 - 252
  • [49] MOLECULAR-BEAM EPITAXY OF MONOTYPE CRSI2 ON SI(111)
    HADERBACHE, L
    WETZEL, P
    PIRRI, C
    PERUCHETTI, JC
    BOLMONT, D
    GEWINNER, G
    SURFACE SCIENCE, 1989, 209 (03) : L139 - L143
  • [50] Molecular beam epitaxy of semiconductor (BaSi2)metal (CoSi2) hybrid structures on Si(111) substrates for photovoltaic application
    Ichikawa, Y.
    Kobayashi, M.
    Sasase, M.
    Suemasu, T.
    APPLIED SURFACE SCIENCE, 2008, 254 (23) : 7963 - 7967