ANALYTICAL EXPRESSIONS FOR TUNNEL CURRENTS IN METAL-INSULATOR-METAL (MIM) AND METAL-INSULATOR-SEMICONDUCTOR (MIS) STRUCTURES IN A 2-BAND MODEL

被引:6
|
作者
HABIB, SED
SIMMONS, JG
机构
关键词
D O I
10.1016/0038-1101(80)90173-2
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:87 / 92
页数:6
相关论文
共 50 条
  • [41] Metal-insulator-semiconductor(MIS) photoelectrodes: distance improves performance
    Joshua Jack
    Zhiyong Jason Ren
    NationalScienceReview, 2021, 8 (08) : 7 - 8
  • [42] Features of metal-insulator-semiconductor diodes with tunnel insulator subjected to UV soaking
    Kilchitskaya, SS
    Kilchitskaya, TS
    Popova, GD
    Skryshevsky, VA
    THIN SOLID FILMS, 1999, 346 (1-2) : 226 - 229
  • [43] Features of metal-insulator-semiconductor diodes with tunnel insulator subjected to UV soaking
    Radiophysics Department, Shevchenko University, Vladimirskaya 64, 252033 Kiev, Ukraine
    Thin Solid Films, 1 (226-229):
  • [44] A COMPREHENSIVE ANALYTICAL MODEL FOR METAL-INSULATOR SEMICONDUCTOR (MIS) DEVICES
    DOGHISH, MY
    HO, FD
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (12) : 2771 - 2780
  • [45] Design of radio frequency metal-insulator-metal (MIM) capacitors
    Goh, MWC
    Lim, Q
    Keating, RA
    Kordesch, AV
    Yusof, YBM
    2004: 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, VOLS 1- 3, PROCEEDINGS, 2004, : 209 - 212
  • [46] Dielectric Properties Investigation of Metal-Insulator-Metal (MIM) Capacitors
    Xiong, Li
    Hu, Jin
    Yang, Zhao
    Li, Xianglin
    Zhang, Hang
    Zhang, Guanhua
    MOLECULES, 2022, 27 (12):
  • [47] Reliability Studies on Thin Metal-Insulator-Metal (MIM) Capacitors
    Hamada, Dorothy June M.
    Roesch, William J.
    2008 ROCS WORKSHOP, PROCEEDINGS, 2008, : 57 - 61
  • [48] Current-voltage characteristics of metal-insulator-metal(MIM) element and its new band model
    Liu, HW
    Guo, JX
    Yuan, JF
    Ma, K
    Huang, XM
    DISPLAY DEVICES AND SYSTEMS, 1996, 2892 : 107 - 111
  • [49] A general simulation procedure for the electrical characteristics of metal-insulator-semiconductor tunnel structures
    M. I. Vexler
    S. E. Tyaginov
    Yu. Yu. Illarionov
    Yew Kwang Sing
    Ang Diing Shenp
    V. V. Fedorov
    D. V. Isakov
    Semiconductors, 2013, 47 : 686 - 694
  • [50] A general simulation procedure for the electrical characteristics of metal-insulator-semiconductor tunnel structures
    Vexler, M. I.
    Tyaginov, S. E.
    Illarionov, Yu Yu
    Sing, Yew Kwang
    Shenp, Ang Diing
    Fedorov, V. V.
    Isakov, D. V.
    SEMICONDUCTORS, 2013, 47 (05) : 686 - 694