ANALYTICAL EXPRESSIONS FOR TUNNEL CURRENTS IN METAL-INSULATOR-METAL (MIM) AND METAL-INSULATOR-SEMICONDUCTOR (MIS) STRUCTURES IN A 2-BAND MODEL

被引:6
|
作者
HABIB, SED
SIMMONS, JG
机构
关键词
D O I
10.1016/0038-1101(80)90173-2
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:87 / 92
页数:6
相关论文
共 50 条
  • [31] PHOTOELECTRIC PROPERTIES OF METAL-INSULATOR-SEMICONDUCTOR STRUCTURES WITH A TUNNEL-TRANSPARENT INSULATOR LAYER (REVIEW)
    VUL, AY
    SACHENKO, AV
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1983, 17 (08): : 865 - 874
  • [32] Electronic properties of InAs-based metal-insulator-semiconductor (MIS) structures
    Kuryshev, GL
    Kovchavtsev, AP
    Valisheva, NA
    SEMICONDUCTORS, 2001, 35 (09) : 1063 - 1071
  • [33] Phenomenon of Internal Photoemission of Electrons in Metal-Insulator-Semiconductor (MIS) Structures.
    Marczewski, Mariusz
    Strzalkowski, Ireneusz
    Elektronika Warszawa, 1979, 20 (04): : 141 - 147
  • [34] Some Problems of Manufacturing and Testing of Metal-Insulator-Semiconductor (MIS) Structures.
    Jakubowski, Andrzej
    Elektronika Warszawa, 1980, 21 (09): : 19 - 22
  • [35] Electronic properties of InAs-based metal-insulator-semiconductor (MIS) structures
    G. L. Kuryshev
    A. P. Kovchavtsev
    N. A. Valisheva
    Semiconductors, 2001, 35 : 1063 - 1071
  • [36] Interface effects in ZnO metal-insulator-semiconductor and metal-semiconductor structures
    Frenzel, H.
    von Wenckstem, H.
    Lajn, A.
    Brandt, M.
    Biehne, G.
    Hochmuth, H.
    Lorenz, M.
    Grundmann, M.
    PHYSICS OF SEMICONDUCTORS, 2009, 1199 : 469 - 470
  • [37] Improving the accuracy in determining the insulator capacitance in metal-insulator-semiconductor structures
    Zhdan, AG
    Kukharskaya, NF
    Chucheva, GV
    INSTRUMENTS AND EXPERIMENTAL TECHNIQUES, 2004, 47 (06) : 791 - 798
  • [38] Analytical model for metal-insulator-metal mesh waveguide architectures
    Lin, Charles
    Swillam, Mohamed A.
    Helmy, Amr S.
    JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS, 2012, 29 (11) : 3157 - 3169
  • [39] Metal-insulator-semiconductor (MIS) photoelectrodes: distance improves performance
    Jack, Joshua
    Ren, Zhiyong Jason
    NATIONAL SCIENCE REVIEW, 2021, 8 (08)
  • [40] Metal-insulator-semiconductor transmission line model
    Williams, DF
    51ST ARFTG CONFERENCE DIGEST, 1998, : 65 - 71