DYNAMIC CHARACTERIZATION OF SI/SIGE POWER HBTS

被引：7

作者：

ERBEN, U ^{[1
]}

GRUHLE, A ^{[1
]}

SCHUPPEN, A ^{[1
]}

KIBBEL, H ^{[1
]}

KOENIG, U ^{[1
]}

机构：

[1] DAIMLER BENZ AG,RES CTR ULM,D-89083 ULM,GERMANY

来源：

ELECTRONICS LETTERS | 1994年 / 30卷 / 06期

关键词：

HETEROJUNCTION BIPOLAR TRANSISTORS; POWER TRANSISTORS;

D O I：

10.1049/el:19940348

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Si/SiGe power heterojunction bipolar transistors (HBTs) grown by MBE were dynamically characterised in the common-base configuration. At an emitter current density of 1.1x10(5) A/cm2, a maximum frequency of oscillation of 49GHz was observed. At 10GHz a maximum unilateral gain of 14dB is available, and a CW output power of 1.3W/mm for a device with 10 parallel emitter-fingers of 1x10mum2 each was predicted, from CW measurements.

引用

页码：525 / 527

页数：3

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