DYNAMIC CHARACTERIZATION OF SI/SIGE POWER HBTS

被引：7
|
作者：
ERBEN, U [1 ]
GRUHLE, A [1 ]
SCHUPPEN, A [1 ]
KIBBEL, H [1 ]
KOENIG, U [1 ]
机构：
[1] DAIMLER BENZ AG,RES CTR ULM,D-89083 ULM,GERMANY
来源：
ELECTRONICS LETTERS | 1994年 / 30卷 / 06期
关键词：
HETEROJUNCTION BIPOLAR TRANSISTORS; POWER TRANSISTORS;
D O I：
10.1049/el:19940348
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Si/SiGe power heterojunction bipolar transistors (HBTs) grown by MBE were dynamically characterised in the common-base configuration. At an emitter current density of 1.1x10(5) A/cm2, a maximum frequency of oscillation of 49GHz was observed. At 10GHz a maximum unilateral gain of 14dB is available, and a CW output power of 1.3W/mm for a device with 10 parallel emitter-fingers of 1x10mum2 each was predicted, from CW measurements.
引用
收藏
页码：525 / 527
页数：3
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