INP/INGAAS HETEROSTRUCTURE INSULATED-GATE FETS

被引：0
|
作者：
MARTIN, EA
AINA, OA
ILIADIS, AA
MATTINGLY, MR
STECKER, LH
HEMPFLING, E
机构：
来源：
GALLIUM ARSENIDE AND RELATED COMPOUNDS 1988 | 1989年
关键词：
D O I：
暂无
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：509 / 512
页数：4
相关论文
共 50 条
  • [31] PRINTABLE INSULATED-GATE FIELD-EFFECT TRANSISTORS
    SIHVONEN, YT
    PARKER, SG
    BOYD, DR
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (01) : 96 - &
  • [32] EBIC OBSERVATION ON THE INP/INGAAS/INP HETEROSTRUCTURE PHOTODIODE
    TAKANOHASHI, T
    OSAKA, F
    KOMIYA, S
    YAMAZAKI, S
    NAKAJIMA, K
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (04): : L269 - L272
  • [33] Characterization of insulated-gate versus Schottky-gate InAs/AlSb HEMTs
    Malmkvist, Mikael
    Lefebvre, Eric
    Borg, Malin
    Desplanque, Ludovic
    Wallart, Xavier
    Dambrine, Gilles
    Bollaert, Sylvain
    Grahn, Jan
    [J]. 2007 EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE, VOLS 1 AND 2, 2007, : 536 - +
  • [34] Review of Active Gate Control Methods for Insulated-gate Power Switching Devices
    Zhu Y.
    Zhao Z.
    Shi B.
    Ju J.
    Yu Z.
    [J]. Gaodianya Jishu/High Voltage Engineering, 2019, 45 (07): : 2082 - 2092
  • [35] HETEROSTRUCTURE GATES FOR ENHANCEMENT-MODE INGAAS FETS
    FEUER, MD
    CHANG, TY
    SHUNK, SC
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (11) : 1840 - 1840
  • [36] The design of a new heterogate superjunction insulated-gate bipolar transistor
    Namrata Gupta
    Alok Naugarhiya
    [J]. Journal of Computational Electronics, 2021, 20 : 883 - 891
  • [37] Insights into radiation displacement defect in an insulated-gate bipolar transistor
    Kim, Kihyun
    Kim, Jungsik
    [J]. AIP ADVANCES, 2021, 11 (02)
  • [38] Analytical estimation of breakdown voltage in insulated-gate bipolar transistors
    Chen Zhu
    Petru Andrei
    [J]. Journal of Computational Electronics, 2021, 20 : 1202 - 1208
  • [39] CURRENT-VOLTAGE AND CAPACITANCE-VOLTAGE CHARACTERISTICS OF HETEROSTRUCTURE INSULATED-GATE FIELD-EFFECT TRANSISTORS.
    Baek, Junho
    Shur, Michael
    Daniels, Robert R.
    Arch, David K.
    Abrokwah, Jonathon K.
    Tufte, Obert N.
    [J]. IEEE Transactions on Electron Devices, 1987, ED-34 (08) : 1650 - 1657
  • [40] LOCALIZED LIFETIME CONTROL IN INSULATED-GATE TRANSISTORS BY PROTON IMPLANTATION
    MOGROCAMPERO, A
    LOVE, RP
    CHANG, MF
    DYER, R
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (11) : 1667 - 1671
12345