INP/INGAAS HETEROSTRUCTURE INSULATED-GATE FETS

被引：0
|
作者：
MARTIN, EA
AINA, OA
ILIADIS, AA
MATTINGLY, MR
STECKER, LH
HEMPFLING, E
机构：
来源：
GALLIUM ARSENIDE AND RELATED COMPOUNDS 1988 | 1989年
关键词：
D O I：
暂无
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：509 / 512
页数：4
相关论文
共 50 条
  • [21] The insulated-gate bipolar transistors (IGBT) and their reliability
    Tranzistorii bipolari izolaţi
    [J]. BǍjenescu, T.-M. I. (tmbajenesco@bluewin.ch), 1600, Editura ELECTRA (60):
  • [22] Simulation of the piezoelectric effect on the device characteristics of AlGaN/GaN insulated-gate heterostructure field effect transistors
    Imanaga, Syunji
    Kawai, Hiroji
    [J]. Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 1998, 37 (11): : 5906 - 5913
  • [23] Simulation of the piezoelectric effect on the device characteristics of AlGaN/GaN insulated-gate heterostructure field effect transistors
    Imanaga, S
    Kawai, H
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (11): : 5906 - 5913
  • [24] Quantum Dot Gate InGaAs FETs
    Jain, F.
    Alamoody, F.
    Suarez, E.
    Gogna, M.
    Chan, P-Y.
    Karmakar, S.
    Fikiet, J.
    Miller, B.
    Heller, E.
    [J]. NANOTECH CONFERENCE & EXPO 2009, VOL 1, TECHNICAL PROCEEDINGS: NANOTECHNOLOGY 2009: FABRICATION, PARTICLES, CHARACTERIZATION, MEMS, ELECTRONICS AND PHOTONICS, 2009, : 598 - +
  • [25] Effects of gamma irradiation on the insulated-gate bipolar transistor
    Tong, ZH
    Ang, SS
    Brown, WD
    [J]. MICROELECTRONICS AND RELIABILITY, 1996, 36 (10): : 1489 - 1498
  • [26] Investigation of Cylindrical Channel Gate All Around InGaAs/InP Heterojunction Heterodielectric Tunnel FETs
    Vimala, P.
    Arun Samuel, T. S.
    [J]. SILICON, 2021, 13 (11) : 3899 - 3907
  • [27] SILICON INSULATED-GATE FIELD-EFFECT TRANSISTOR
    HOFSTEIN, SR
    HEIMAN, FP
    [J]. PROCEEDINGS OF THE IEEE, 1963, 51 (09) : 1190 - &
  • [28] Investigation of Cylindrical Channel Gate All Around InGaAs/InP Heterojunction Heterodielectric Tunnel FETs
    P. Vimala
    T. S. Arun Samuel
    [J]. Silicon, 2021, 13 : 3899 - 3907
  • [29] Theoretical and experimental characteristics of the Insulated-Gate Thyristor (IGTH)
    Ajit, JS
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1997, 44 (03) : 481 - 488
  • [30] Surface passivation of GaN and GaN/AlGaN heterostructures by dielectric films and its application to insulated-gate heterostructure transistors
    Hashizume, T
    Ootomo, S
    Inagaki, T
    Hasegawa, H
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2003, 21 (04): : 1828 - 1838
12345