INP/INGAAS HETEROSTRUCTURE INSULATED-GATE FETS

被引：0
|
作者：
MARTIN, EA
AINA, OA
ILIADIS, AA
MATTINGLY, MR
STECKER, LH
HEMPFLING, E
机构：
来源：
GALLIUM ARSENIDE AND RELATED COMPOUNDS 1988 | 1989年
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D O I：
暂无
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
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页码：509 / 512
页数：4
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