SILICON DETECTOR SYSTEM FOR HIGH-RATE EXAFS APPLICATIONS

被引：8

作者：

PULLIA, A ^{[1
]}

KRANER, HW ^{[1
]}

SIDDONS, DP ^{[1
]}

FURENLID, LR ^{[1
]}

BERTUCCIO, G ^{[1
]}

机构：

[1] POLITECN MILAN,DIPARTIMENTO ELETTRON & INFORMAZ,I-20133 MILAN,ITALY

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1995年 / 42卷 / 04期

关键词：

D O I：

10.1109/23.467909

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A multichannel silicon pad detector for EXAFS (Extended X-ray Absorption Fine Structure) applications has been designed and built. The X-ray spectroscopic measurements demonstrate that an adequate energy resolution of 230 eV FWHM (corresponding to 27 rms electrons in silicon) can be achieved reliably at -35 degrees C. A resolution of 190 eV FWHM (corresponding to 22 rms electrons) has been obtained from individual pads at -35 degrees C. At room temperature (25 degrees C) an average energy resolution of 380 eV FWHM is achieved and a resolution of 350 eV FWHM (41 rms electrons) is the best performance. A simple cooling system constituted of Pettier cells is sufficient to reduce the reverse currents of the pads and their related shot noise contribution, in order to achieve resolutions better than 300 eV FWHM which is adequate for the EXAFS applications.

引用

页码：585 / 589

页数：5

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