RELAXATION OF GREEN LUMINESCENCE AND POST-INJECTION EMF OF GAP P-N STRUCTURES

被引:0
|
作者
TSARENKOV, BV [1 ]
VEDENIN, VD [1 ]
EVSTROPOV, VV [1 ]
IMENKOV, AN [1 ]
POPOV, IV [1 ]
机构
[1] AF IOFFE PHYSICOTECH INST, LENINGRAD, USSR
来源
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1973年 / 6卷 / 11期
关键词
D O I
暂无
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:1825 / 1828
页数:4
相关论文
共 50 条
  • [21] NONCLASSICAL THERMAL INJECTION CURRENT IN SILICON-CARBIDE P-N STRUCTURES
    ANIKIN, MM
    EVSTROPOV, VV
    POPOV, IV
    RASTEGAEV, VN
    STRELCHUK, AM
    SYRKIN, AL
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1989, 23 (04): : 405 - 407
  • [22] Current Injection induced Terahertz Emission from p-n Si Structures
    Andrianov, A. V.
    Zakharin, A. O.
    Sobolev, N. A.
    Vasilyev, Yu. B.
    Egorov, S. V.
    2016 41ST INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ), 2016,
  • [23] TIME-DECAY CHARACTERISTICS FOR GREEN EMISSION FROM A GAP P-N JUNCTION
    HARPER, FE
    HAKKI, BW
    JOURNAL OF APPLIED PHYSICS, 1969, 40 (02) : 672 - &
  • [24] ON DEPENDENCE OF BRIGHTNESS OF DIFFUSIONAL P-N JUNCTIONS LUMINESCENCE IN SILICON CARBIDE DENSITY OF INJECTION CURRENT
    KRYACHKO, IV
    IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1968, (12): : 123 - +
  • [25] SOME PROPERTIES OF P-N JUNCTIONS IN GAP
    GRIMMEISS, H
    RABENAU, A
    KOELMANS, H
    JOURNAL OF APPLIED PHYSICS, 1961, 32 : 2123 - &
  • [26] CHARGE MULTIPLICATION IN GAP P-N JUNCTIONS
    LOGAN, RA
    WHITE, HG
    JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) : 3945 - &
  • [27] NONRADIATIVE COMPONENT OF CURRENT AND ITS INCREASE DURING DEGRADATION OF GAP P-N STRUCTURES
    VEDENIN, VD
    EVSTROPOV, VV
    KALININ, BN
    TSARENKOV, BV
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (10): : 1294 - 1298
  • [28] CURRENT-VOLTAGE AND SPECTRAL CHARACTERISTICS OF VARIABLE-GAP P-N STRUCTURES
    OSIPOV, VV
    SOBOLEVA, TI
    KHOLODNOV, VA
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (12): : 1361 - 1365
  • [29] SOME ELECTRIC AND PHOTOELECTRIC PROPERTIES OF P-N STRUCTURES UTILIZING INP, ALSB, GAP
    AGAEV, Y
    GAZAKOV, O
    KVANTOVAYA ELEKTRONIKA, 1982, 9 (12): : 2465 - 2475
  • [30] VARIABLE-GAP GA1-XALXSB P-N STRUCTURES AND THEIR PROPERTIES
    IMENKOV, AN
    LIDEIKIS, TP
    TSARENKOV, BV
    SHERNYAKOV, YM
    YAKOVLEV, YP
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (07): : 748 - 751