HOT CARRIER EFFECTS IN 1.3 MU-M IN1-XGAXASYP1-Y LEDS

被引:0
|
作者
NAHORY, RE [1 ]
SHAH, J [1 ]
LEHENY, RF [1 ]
TEMKIN, HT [1 ]
机构
[1] BELL TEL LABS INC,HOLMDEL,NJ 07733
关键词
D O I
10.1109/T-ED.1981.20536
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1221 / 1221
页数:1
相关论文
共 50 条
  • [41] 1.3μm场助TE光阴极In1-xGaxAsyP1-y/InP的能带计算及外延层的设计
    王存让
    郭里辉
    李晋闽
    侯洵
    张工力
    光子学报, 1992, (01) : 73 - 78
  • [42] THERMODYNAMIC CALCULATION OF THE VPE GROWTH OF IN1-XGAXASYP1-Y BY THE TRICHLORIDE METHOD
    SEKI, H
    KOUKITU, A
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1985, 24 (04): : 458 - 462
  • [43] INTERBAND MAGNETO-OPTICAL STUDIES IN IN1-XGAXASYP1-Y ALLOYS
    ALAVI, K
    AGGARWAL, RL
    GROVES, SH
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1979, 24 (03): : 336 - 336
  • [44] ELECTROREFLECTANCE INVESTIGATION OF IN1-XGAXASYP1-Y LATTICE-MATCHED TO INP
    LAUFER, PM
    POLLAK, FH
    NAHORY, RE
    POLLACK, MA
    SOLID STATE COMMUNICATIONS, 1980, 36 (05) : 419 - 422
  • [45] TEMPERATURE-DEPENDENCE OF THE TRANSFERRED ELECTRON THRESHOLD CURRENTIN IN1-XGAXASYP1-Y
    HEASMAN, KC
    HAYES, JR
    ADAMS, AR
    GREENE, PD
    ELECTRONICS LETTERS, 1981, 17 (20) : 756 - 757
  • [46] PREPARATION AND CHARACTERIZATION OF IN1-XGAXASYP1-Y EPILAYERS BY LIQUID-PHASE EPITAXY
    SU, YK
    WANG, JH
    HUNG, MP
    JOURNAL OF MATERIALS SCIENCE, 1989, 24 (03) : 899 - 905
  • [47] X-RAY, PHOTOLUMINESCENCE, STOICHIOMETRY, AND THICKNESS MAPPING OF IN1-XGAXASYP1-Y
    MACRANDER, AT
    LAU, S
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1991, 138 (04) : 1147 - 1154
  • [48] OPTICAL CHARACTERISTICS OF EXCITONS IN IN1-XGAXASYP1-Y/INP QUANTUM-WELLS
    SUGAWARA, M
    FUJII, T
    YAMAZAKI, S
    NAKAJIMA, K
    PHYSICAL REVIEW B, 1991, 44 (04): : 1782 - 1791
  • [49] ELECTROABSORPTIVE IN1-XGAXASYP1-Y SUPERLATTICES GROWN BY LIQUID-PHASE EPITAXY
    GREENE, PD
    WHEELER, SA
    JOURNAL OF CRYSTAL GROWTH, 1987, 84 (02) : 259 - 265
  • [50] INTERBAND MAGNETO-OPTICAL STUDIES IN IN1-XGAXASYP1-Y SEMICONDUCTING ALLOYS
    ALAVI, K
    AGGARWAL, RL
    GROVES, SH
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1981, 26 (03): : 421 - 421