HOT CARRIER EFFECTS IN 1.3 MU-M IN1-XGAXASYP1-Y LEDS

被引：0

作者：

NAHORY, RE ^{[1
]}

SHAH, J ^{[1
]}

LEHENY, RF ^{[1
]}

TEMKIN, HT ^{[1
]}

机构：

[1] BELL TEL LABS INC,HOLMDEL,NJ 07733

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1981年 / 28卷 / 10期

关键词：

D O I：

10.1109/T-ED.1981.20536

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1221 / 1221

页数：1

共 50 条

[21] TRANSPORT PHENOMENA AND ALLOY SCATTERING IN IN1-XGAXASYP1-Y COMPOUNDS
GALVANAUSKAS, A
GORELENOK, A
DOBROVOLSKIS, Z
KERSHULIS, S
POZHELA, Y
REKLAITIS, A
SHMIDT, N
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1988, 22 (09): : 1055 - 1058
[22] In1-xGaxAsyP1-y的喇曼光谱（英文）
周赫田
孟为
刘宏度
固体电子学研究与进展, 1989, (04) : 450 - 450
[23] COMPOSITIONAL DEPENDENCE OF THE ELECTRON-MOBILITY IN IN1-XGAXASYP1-Y
LEHENY, RF
BALLMAN, AA
DEWINTER, JC
NAHORY, RE
POLLACK, MA
JOURNAL OF ELECTRONIC MATERIALS, 1980, 9 (03) : 561 - 568
[24] THE INFLUENCE OF ALLOY SCATTERING ON ELECTRONS AND HOLES IN IN1-XGAXASYP1-Y
ADAMS, AR
HAYES, JR
GREENE, PD
JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (03) : 315 - 320
[25] InP和In1-xGaxAsyP1-y的电学性质
孟宪章
姚欣
仪表材料, 1985, (06) : 326 - 330
[26] Electrolyte electroreflectance spectra of InP and In1-xGaxAsyP1-y/InP
Guti Dianzixue Yanjiu Yu Jinzhan, 3 (269):
[27] BERYLLIUM-ION IMPLANTATION IN INP AND IN1-XGAXASYP1-Y
DONNELLY, JP
ARMIENTO, CA
APPLIED PHYSICS LETTERS, 1979, 34 (01) : 96 - 99
[28] LATTICE-VIBRATIONS OF IN1-XGAXASYP1-Y QUATERNARY COMPOUNDS
PINCZUK, A
WORLOCK, JM
NAHORY, RE
POLLACK, MA
APPLIED PHYSICS LETTERS, 1978, 33 (05) : 461 - 463
[29] FAR-INFRARED SPECTROSCOPIC STUDY OF IN1-XGAXASYP1-Y
AMIRTHARAJ, PM
HOLAH, GD
PERKOWITZ, S
PHYSICAL REVIEW B, 1980, 21 (12): : 5656 - 5661
[30] RAMAN-SCATTERING IN IN1-XGAXASYP1-Y QUATERNARY ALLOYS
SONI, RK
ABBI, SC
JAIN, KP
BALKANSKI, M
SLEMPKES, S
BENCHIMOL, JL
JOURNAL OF APPLIED PHYSICS, 1986, 59 (06) : 2184 - 2188

← 1 2 3 4 5 →