PROCEEDINGS OF THE 8TH MOLECULAR-BEAM EPITAXY WORKSHOP - PREFACE

被引：0

作者：

MILLER, JN

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 02期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：592 / 592

页数：1

共 50 条

[41] MOLECULAR-BEAM EPITAXY OF AISB
CHANG, CA
TAKAOKA, H
CHANG, LL
ESAKI, L
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (11) : 983 - 985
[42] TECHNOLOGY OF MOLECULAR-BEAM EPITAXY
STALMACH, P
KRALOVA, M
HUDEC, L
[J]. CHEMICKE LISTY, 1988, 82 (04): : 372 - 381
[43] SILICON MOLECULAR-BEAM EPITAXY
KUBIAK, R
PARKER, E
[J]. ELECTRONICS AND POWER, 1984, 30 (11-1): : 853 - 856
[44] SILICON MOLECULAR-BEAM EPITAXY
OTA, Y
[J]. THIN SOLID FILMS, 1983, 106 (1-2) : 3 - 136
[45] SILICON MOLECULAR-BEAM EPITAXY
BEAN, JC
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (03) : C121 - C121
[46] MOLECULAR-BEAM EPITAXY OF GASB
LONGENBACH, KF
WANG, WI
[J]. APPLIED PHYSICS LETTERS, 1991, 59 (19) : 2427 - 2429
[47] SILICON MOLECULAR-BEAM EPITAXY
SHIRAKI, Y
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02): : 725 - 729
[48] SILICON MOLECULAR-BEAM EPITAXY
SHIRAKI, Y
[J]. PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS, 1986, 12 (1-4) : 45 - 66
[49] MOLECULAR-BEAM EPITAXY OF SILICON
KASPER, E
[J]. 1979, 52 (1-2): : 147 - 155
[50] SILICON MOLECULAR-BEAM EPITAXY
GRAVESTEIJN, DJ
VANDEWALLE, GFA
VANGORKUM, AA
[J]. ADVANCED MATERIALS, 1991, 3 (7-8) : 351 - 355