Moisture Gettering by Porous Alumina Films on Textured Silicon Wafer

被引：1
|
作者：
Lim, Hyo Ryoung [1 ]
Eom, Nu Si A. [1 ]
Cho, Jeong-Ho [2 ]
Choa, Yong-Ho [1 ]
机构：
[1] Hanyang Univ, Dept Fus Chem Engn, 1271 Sa 3 Dong, Hanyang Uniyersift 426791, Gyeonggi, South Korea
[2] Korea Inst Ceram Engn & Technol, Elect Components Ctr, Seoul 153801, South Korea
来源：
KOREAN CHEMICAL ENGINEERING RESEARCH | 2015年 / 53卷 / 03期
关键词：
Getter; Moisture Adsorption; Solution Process; Anodizing; Anodic Aluminum Oxide;
D O I：
10.9713/kcer.2015.53.3.401
中图分类号：
TQ [化学工业];
学科分类号：
0817 ;
摘要：
Getter is a class of materials used in absorbing gases such as hydrogen and moisture in microelectronics or semiconductor devices to operate properly. In this study, we developed a new device structure consisting of porous anodized alumina films on textured silicon wafer, which have cost efficiency in materials and processing aspects. Anodic aluminum oxide (AAO) with controlled pore sizes can be applied to a high-efficiency moisture absorber due to the high surface area and OH- saturated surface property. The moisture sorption capacity was 2.02% (RH=35%), obtained by analyzing isothermal adsorption/desorption curve.
引用
收藏
页码：401 / 406
页数：6
相关论文
共 50 条
  • [1] Characterization of defects for effective gettering in silicon wafer and polysilicon thin films
    Macodiyo, Dan O.
    Soyama, Hitoshi
    Hayashi, Kazuo
    PROCEEDINGS OF THE 8TH BIENNIAL CONFERENCE ON ENGINEERING SYSTEMS DESIGN AND ANALYSIS, VOL 2, 2006, : 963 - 972
  • [2] MOISTURE GETTERING WITH POROUS VYCOR
    RAND, MJ
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1960, 107 (12) : C269 - C269
  • [3] Porous silicon gettering
    Tsuo, YS
    Menna, P
    Pitts, JR
    Jantzen, KR
    Asher, SE
    AlJassim, MM
    Ciszek, TF
    CONFERENCE RECORD OF THE TWENTY FIFTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 1996, 1996, : 461 - 464
  • [4] Gettering of defects in silicon by porous silicon
    Huang, Yiping
    Zhu, Shiyang
    Bao, Zongming
    He, Yi
    Zhong, Huizhou
    Wu, Dongping
    Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 1998, 19 (12): : 936 - 939
  • [5] Microdefects induced by cavitation for gettering in silicon wafer
    Dan O. Macodiyo
    Hitoshi Soyama
    Takashi Masakawa
    Kazuo Hayashi
    Journal of Materials Science, 2006, 41 : 5380 - 5382
  • [6] CONFORMAL GROWTH OF TEXTURED BARIUM TITANATE FILMS ON PATTERNED SILICON WAFER
    Zhou, Zhi
    Patterson, Brendan A.
    Bowland, Christopher C.
    Malakooti, Mohammad. H.
    Sodano, Henry A.
    PROCEEDINGS OF THE ASME CONFERENCE ON SMART MATERIALS, ADAPTIVE STRUCTURES AND INTELLIGENT SYSTEMS, 2016, VOL 1, 2016,
  • [7] Microdefects induced by cavitation for gettering in silicon wafer
    Macodiyo, Dan O.
    Soyama, Hitoshi
    Masakawa, Takashi
    Hayashi, Kazuo
    JOURNAL OF MATERIALS SCIENCE, 2006, 41 (16) : 5380 - 5382
  • [8] EFFECT OF MOISTURE ON THE DIELECTRIC-PROPERTIES OF POROUS ALUMINA FILMS
    KHANNA, VK
    NAHAR, RK
    SENSORS AND ACTUATORS, 1984, 5 (03): : 187 - 198
  • [9] Gettering technology based on porous silicon
    Lamedica, G
    Balucani, M
    Ferrari, A
    Bondarenko, V
    Yakovtseva, V
    Dolgyi, L
    GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY, 2002, 82-84 : 405 - 410
  • [10] Examination of the microstructure of porous anodic films of silicon and alumina
    Dubin, V.M.
    Andryushenko, T.N.
    Physics and chemistry of materials treatment, 1989, 23 (03): : 264 - 266
12345