MODELING OF SELF-HEATING EFFECTS IN THIN-FILM SOI MOSFETS AS A FUNCTION OF TEMPERATURE

被引：6
|
作者：
JOMAAH, J
GHIBAUDO, G
BALESTRA, F
机构：
来源：
JOURNAL DE PHYSIQUE IV | 1994年 / 4卷 / C6期
关键词：
D O I：
10.1051/jp4:1994609
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Self-heating phenomena are studied from room down to near liquid helium temperatures in fully depleted N channel thin film SIMOX MOS devices. A simple theoretical analysis of the self-heating effect is worked out. A method for the extraction of the thermal resistance and the device temperature rise directly from the static output characteristics is derived. Also direct self heating transient measurements are conducted in order to confirm our analysis.
引用
收藏
页码：57 / 62
页数：6
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