共 50 条
- [22] ELECTRICAL-PROPERTIES OF GERMANIUM DOPED BY IMPLANTATION OF PHOSPHORUS IONS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (11): : 1298 - 1299
- [23] INVESTIGATION OF ELECTRICAL-PROPERTIES OF PALLADIUM-DOPED GERMANIUM SOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (09): : 1074 - 1076
- [24] ANOMALOUS ROOM-TEMPERATURE IMPURITY PHOTOCONDUCTIVITY OF MERCURY-DOPED GERMANIUM SOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (08): : 861 - 863
- [25] INVESTIGATION OF S-TYPE DIODES MADE OF CHROMIUM-DOPED SEMI-INSULATING GAAS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 4 (11): : 1748 - &
- [26] ELECTROLUMINESCENCE OF S-TYPE DIODES MADE OF IRON- AND NICKEL-DOPED GALLIUM ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 3 (07): : 917 - +
- [27] HIGH GAIN MICROWAVE-BIASED MERCURY-DOPED GERMANIUM PHOTOCONDUCTORS INFRARED PHYSICS, 1971, 11 (02): : 129 - &
- [29] S-TYPE DIODES MADE OF IRIDIUM-COMPENSATED SILICON SOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (10): : 1200 - 1201
- [30] METALLIC CONDUCTION OVER THE GRAIN-BOUNDARIES OF MERCURY-DOPED GERMANIUM FIZIKA TVERDOGO TELA, 1988, 30 (08): : 2391 - 2396