ELECTRICAL-PROPERTIES OF S-TYPE DIODES MADE OF MERCURY-DOPED GERMANIUM

被引：0
|
作者：
VIKULIN, IM
KURMASHEV, SD
ANDREEV, VI
GINKO, VI
PROKHOROV, LS
机构：
来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1979年 / 13卷 / 01期
关键词：
D O I：
暂无
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：94 / 96
页数：3
相关论文
共 50 条
  • [11] INVESTIGATION OF S-TYPE DIODES MADE OF RHODIUM-DOPED SILICON
    AZIMOV, SA
    KARIMOV, FR
    LEBEDEV, AA
    MAMADALIMOV, AT
    YUNUSOV, MS
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 8 (12): : 1537 - 1539
  • [12] INFLUENCE OF ELECTRON-IRRADIATION ON ELECTRICAL-PROPERTIES OF P-TYPE GERMANIUM DOPED WITH ZINC AND MERCURY
    MAMONTOV, AM
    BARYSHEV, NS
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (08): : 880 - 881
  • [13] LIFETIME OF MINORITY CARRIERS IN MERCURY-DOPED GERMANIUM
    IGLITSYN, MI
    YUROVA, ES
    SOVIET PHYSICS SOLID STATE,USSR, 1967, 8 (11): : 2736 - +
  • [14] A COMPARISON OF THE PERFORMANCE OF COPPER-DOPED GERMANIUM AND MERCURY-DOPED GERMANIUM DETECTORS
    BODE, DE
    GRAHAM, HA
    INFRARED PHYSICS, 1963, 3 (03): : 129 - 137
  • [15] INVESTIGATION OF S-TYPE DIODES MADE OF RHODIUM-DOPED SILICON.
    Azimov, S.A.
    Karimov, F.R.
    Lebedev, A.A.
    Mamadalimov, A.T.
    Yunusov, M.S.
    Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1975, 8 (12): : 1537 - 1539
  • [16] METALLURGY AND PHYSICAL PROPERTIES OF MERCURY-DOPED GERMANIUM RELATED TO PERFORMANCES OF INFRARED DETECTOR
    DARVIOT, Y
    SORRENTI.A
    JOLY, B
    PAJOT, B
    INFRARED PHYSICS, 1967, 7 (01): : 1 - &
  • [17] POLYCRYSTALLINITY EFFECT ON THE ELECTRICAL-PROPERTIES OF DOPED GERMANIUM
    KHUTSISHVILI, EV
    KEKUA, MG
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1980, 61 (01): : K1 - +
  • [18] ELECTRICAL-PROPERTIES OF OXYGEN-DOPED GERMANIUM
    GONCHAROV, LA
    LEONOV, PA
    KHORVAT, AM
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (05): : 580 - 581
  • [19] INFLUENCE OF MERCURY CONCENTRATION ON INTENSITY OF EXCITATION SPECTRUM OF MERCURY-DOPED GERMANIUM
    PAJOT, B
    DARVIOT, Y
    PHYSICS LETTERS, 1966, 21 (05): : 512 - &
  • [20] SOME PROPERTIES OF S-TYPE DIODES MADE OF SEMIINSULATING GALLIUM-ARSENIDE
    EGIAZARYAN, GA
    STAFEEV, VI
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (03): : 334 - 336
12345