A P-CHANNEL COUPLED DELTA-DOPED SILICON MESFET GROWN BY MOLECULAR-BEAM EPITAXY

被引：3

作者：

WANG, SJ ^{[1
]}

WU, SL ^{[1
]}

CHUNG, HD ^{[1
]}

CARNS, TK ^{[1
]}

ZHENG, X ^{[1
]}

WANG, KL ^{[1
]}

机构：

[1] UNIV CALIF LOS ANGELES,DEPT ELECT ENGN,DEVICE RES LAB,LOS ANGELES,CA 90024

来源：

IEEE ELECTRON DEVICE LETTERS | 1994年 / 15卷 / 06期

关键词：

D O I：

10.1109/55.286693

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Experimental realization of a new p-channel silicon metal semiconductor field-effect transistors (Si MESFET) structure, utilizing two boron delta-doped layers placed in close proximity with one another as conducting channel, is reported for the first time. This simple homoepitaxially grown Si structure exhibits not only higher sheet carrier density but also higher hole mobility than those of a single delta-doped layer. The measured transconductance of the device is 1.44 mS/mm at 300 K with a gate length of 5 mum, which is a factor of 1.7 higher than the single delta-doped layer Si MESFET for the same dose in each delta-doped layer.

引用

页码：206 / 208

页数：3

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