A P-CHANNEL COUPLED DELTA-DOPED SILICON MESFET GROWN BY MOLECULAR-BEAM EPITAXY

Experimental realization of a new p-channel silicon metal semiconductor field-effect transistors (Si MESFET) structure, utilizing two boron delta-doped layers placed in close proximity with one another as conducting channel, is reported for the first time. This simple homoepitaxially grown Si structure exhibits not only higher sheet carrier density but also higher hole mobility than those of a single delta-doped layer. The measured transconductance of the device is 1.44 mS/mm at 300 K with a gate length of 5 mum, which is a factor of 1.7 higher than the single delta-doped layer Si MESFET for the same dose in each delta-doped layer.