LOW-HIGH-LOW PROFILE GALLIUM-ARSENIDE IMPATT RELIABILITY

被引：3

作者：

HEATON, JL ^{[1
]}

WALLINE, RE ^{[1
]}

CARROLL, JF ^{[1
]}

机构：

[1] ROME AIR DEV CTR,GRIFFISS AFB,NY 13441

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1979年 / 26卷 / 01期

关键词：

D O I：

10.1109/T-ED.1979.19385

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：96 / 101

页数：6

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