LOW-HIGH-LOW PROFILE GALLIUM-ARSENIDE IMPATT RELIABILITY

被引：3
|
作者：
HEATON, JL [1 ]
WALLINE, RE [1 ]
CARROLL, JF [1 ]
机构：
[1] ROME AIR DEV CTR,GRIFFISS AFB,NY 13441
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1979年 / 26卷 / 01期
关键词：
D O I：
10.1109/T-ED.1979.19385
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：96 / 101
页数：6
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