LOW-HIGH-LOW PROFILE GALLIUM-ARSENIDE IMPATT RELIABILITY

被引：3

作者：

HEATON, JL ^{[1
]}

WALLINE, RE ^{[1
]}

CARROLL, JF ^{[1
]}

机构：

[1] ROME AIR DEV CTR,GRIFFISS AFB,NY 13441

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1979年 / 26卷 / 01期

关键词：

D O I：

10.1109/T-ED.1979.19385

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：96 / 101

页数：6

共 50 条

[1] LOW-FREQUENCY NOISE CHARACTERISTICS OF COMMERCIAL SILICON AND GALLIUM-ARSENIDE IMPATT DIODES
GUTMANN, RJ
KUCHAREWSKI, N
PROCEEDINGS OF THE IEEE, 1973, 61 (05) : 676 - 678
[2] 50 GHZ GALLIUM-ARSENIDE IMPATT OSCILLATOR
GIBBONS, G
GOKGOR, HS
WICKENS, PR
PURCELL, JJ
ELECTRONICS LETTERS, 1972, 8 (21) : 513 - &
[3] RELIABILITY OF GALLIUM-ARSENIDE DEVICES
MAURER, RH
CHAO, KD
BARGERON, CB
BENSON, RC
NHAN, E
JOHNS HOPKINS APL TECHNICAL DIGEST, 1992, 13 (03): : 407 - 417
[4] ADMITTANCE BEHAVIOR OF LOW-HIGH-LOW GAAS SCHOTTKY IMPATT DIODES
EKNOYAN, O
KEMERLEY, RT
HOURANI, SM
IEEE TRANSACTIONS ON COMPONENTS HYBRIDS AND MANUFACTURING TECHNOLOGY, 1979, 2 (02): : 254 - 257
[5] LOW-TEMPERATURE IRRADIATION OF GALLIUM-ARSENIDE
IVANYUKOVICH, VA
KARAS, VI
LOMAKO, VM
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1990, 24 (01): : 111 - 112
[6] LOW-TEMPERATURE PHOTOLUMINESCENCE OF GALLIUM-ARSENIDE
STOPACHINSKY, VB
ZHURNAL EKSPERIMENTALNOI I TEORETICHESKOI FIZIKI, 1977, 72 (02): : 592 - 601
[7] LOW-TEMPERATURE CONTACTS TO GALLIUM-ARSENIDE
VARSHAVA, SS
VAINBERG, VV
INSTRUMENTS AND EXPERIMENTAL TECHNIQUES, 1980, 23 (01) : 279 - 281
[8] LOW REVERSE LEAKAGE GALLIUM-ARSENIDE DIODES
HALPERN, J
REDIKER, RH
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1960, 48 (10): : 1780 - 1781
[9] LOW-FREQUENCY NOISE IN GALLIUM-ARSENIDE STRUCTURES
HELLUMS, JR
RUCKER, LM
SOLID-STATE ELECTRONICS, 1984, 27 (11) : 949 - 952
[10] IMPACT IONIZATION OF DEEP LEVELS IN GALLIUM-ARSENIDE IMPATT DIODES
LUKYANCHIKOVA, NB
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1989, 23 (02): : 205 - 208

← 1 2 3 4 5 →