AN ADVANCED SELF-ALIGNED BICMOS TECHNOLOGY FOR HIGH-PERFORMANCE 1-MEGABIT ECL I/O SRAMS

被引：0
|
作者：
BURGER, WR
LAGE, C
DAVIES, T
DELONG, M
HAUEISEN, D
SMALL, J
HUGLIN, G
LANDAU, B
WHITWER, F
BASTANI, B
机构：
来源：
1989 INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST | 1989年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：421 / 424
页数：4
相关论文
共 50 条
  • [31] Low-cost self-aligned SiGeCHBT module for high-performance bulk and SOI RFCMOS platforms
    Chevalier, P
    Lagarde, D
    Avenier, G
    Schwartzmann, T
    Barbalat, B
    Lenoble, D
    Bustos, J
    Pourchon, F
    Saguin, F
    Vandelle, B
    Rubaldo, L
    Chantre, A
    IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2005, TECHNICAL DIGEST, 2005, : 983 - 986
  • [32] High performance super self-aligned 3 V/5 V BiCMOS technology with extremely low parasitics for low-power mixed-signal applications
    AT&T Bell Lab, Holmdel, United States
    IEEE Trans Electron Devices, 3 (513-522):
  • [33] High-Performance High-K/Metal Planar Self-Aligned Gate-All-Around CMOS Devices
    Pouydebasque, Arnaud
    Denorme, Stephane
    Loubet, Nicolas
    Wacquez, Romain
    Bustos, Jessy
    Leverd, Francois
    Deloffre, Emilie
    Barnola, Sebastien
    Dutartre, Didier
    Coronel, Philippe
    Skotnicki, Thomas
    IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2008, 7 (05) : 551 - 557
  • [34] High-performance a-ITZO TFTs with high bias stability enabled by self-aligned passivation using a-GaOx
    Shi, Yuhao
    Shiah, Yu-Shien
    Sim, Kihyung
    Sasase, Masato
    Kim, Junghwan
    Hosono, Hideo
    APPLIED PHYSICS LETTERS, 2022, 121 (21)
  • [35] PASSIVELY SELF-ALIGNED ASSEMBLY OF COMPACT BARREL HINGES FOR HIGH-PERFORMANCE, OUT-OF-PLANE MEMS ACTUATORS
    Xie, Xin
    Livermore, Carol
    30TH IEEE INTERNATIONAL CONFERENCE ON MICRO ELECTRO MECHANICAL SYSTEMS (MEMS 2017), 2017, : 813 - 816
  • [36] High-performance self-aligned graphene transistors fabricated using contamination-and defect-free process
    Park, Goon-Ho
    Kim, Kwan-Soo
    Fukidome, Hirokazu
    Suemitsu, Tetsuya
    Otsuji, Taiichi
    Cho, Won-Ju
    Suemitsu, Maki
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2016, 55 (06)
  • [37] HIGH-PERFORMANCE SELF-ALIGNED InP/InGaAs DHBTs WITH A PASSIVATION LEDGE UTILIZING A THIN ETCHING STOP LAYER
    Ohkubo, Yukio
    Matsumoto, Taisuke
    Koji, Takashi
    Amano, Yoshiaki
    Takagi, Akio
    Matsuoka, Yutaka
    2008 IEEE 20TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM), 2008, : 197 - 200
  • [38] High-Performance CVD MoS2 Transistors with Self-Aligned Top-Gate and Bi Contact
    Li, Weisheng
    Fan, Dongxu
    Shao, Liangwei
    Huang, Futao
    Liang, Lei
    Li, Taotao
    Xu, Yifei
    Tu, Xuecou
    Wang, Peng
    Yu, Zhihao
    Shi, Yi
    Qiu, Hao
    Wang, Xinran
    2021 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2021,
  • [39] INCREASED CURRENT GAIN AND SUPPRESSION OF PERIPHERAL BASE CURRENTS IN SILICIDED SELF-ALIGNED NARROW-WIDTH POLYSILICON-EMITTER TRANSISTORS OF AN ADVANCED BICMOS TECHNOLOGY
    ELDIWANY, MH
    BRASSINGTON, MP
    TUNTASOOD, P
    IEEE ELECTRON DEVICE LETTERS, 1988, 9 (05) : 247 - 249
  • [40] GAAS ICS FABRICATED WITH THE HIGH-PERFORMANCE, HIGH-YIELD MULTIFUNCTION SELF-ALIGNED GATE PROCESS FOR RADAR AND EW APPLICATIONS
    BAHL, IJ
    WILLEMS, DA
    NABER, JF
    SINGH, HP
    GRIFFIN, EL
    POLLMAN, MD
    GEISSBERGER, AE
    SADLER, RA
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1990, 38 (09) : 1232 - 1241
12345