共 50 条
- [21] CONCERNING STRUCTURE OF RECOMBINATION RADIATION SPECTRA FROM DIFFUSED INDIUM ARSENIDE DIODES SOVIET PHYSICS SOLID STATE,USSR, 1967, 8 (08): : 1974 - +
- [22] REFLECTIVITY AND OPTICAL CONSTANTS OF INDIUM ARSENIDE, INDIUM ANTIMONIDE, AND GALLIUM ARSENIDE PHYSICAL REVIEW, 1961, 124 (05): : 1314 - +
- [23] ELECTRICAL PROPERTIES OF GALLIUM ARSENIDE P-N JUNCTION TUNNEL DIODES SOVIET PHYSICS SOLID STATE,USSR, 1965, 6 (08): : 1808 - +
- [26] ORIENTED GROWTH AND INDIUM ARSENIDE ON GALLIUM ARSENIDE ACTA PHYSICA AUSTRIACA, 1967, 25 (04): : 336 - &
- [28] PRESSURE GAUGE, BASED ON GALLIUM-ARSENIDE TUNNEL-DIODES, IRRADIATED BY ELECTRONS PRIBORY I TEKHNIKA EKSPERIMENTA, 1974, (06): : 168 - 170
- [30] An energetic study on the formation of self-assembled indium arsenide nanostructures grown on indium gallium arsenide/indium phosphide and gallium arsenide substrates PROCEEDINGS OF THE INSTITUTION OF MECHANICAL ENGINEERS PART N-JOURNAL OF NANOMATERIALS NANOENGINEERING AND NANOSYSTEMS, 2007, 221 (01) : 37 - 40