ASSESSMENT OF GAAS HETEROEPITAXIAL FILMS GROWN ON SILICON-ON-SAPPHIRE UPGRADED BY DOUBLE SOLID-PHASE EPITAXY

被引：6
|
作者：
POSTHILL, JB
MARKUNAS, RJ
HUMPHREYS, TP
NEMANICH, RJ
DAS, K
PARIKH, NR
ROSS, PL
MINER, CJ
机构：
[1] N CAROLINA STATE UNIV,DEPT PHYS,RALEIGH,NC 27695
[2] N CAROLINA STATE UNIV,DEPT MAT SCI & ENGN,RALEIGH,NC 27695
[3] N CAROLINA STATE UNIV,DEPT PHYS & ASTRON,RALEIGH,NC 27695
[4] BELL NO RES,OTTAWA K1Y 4H7,ONTARIO,CANADA
来源：
APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 17期
关键词：
D O I：
10.1063/1.102208
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1756 / 1758
页数：3
相关论文
共 50 条
  • [31] GROWTH OF SILICON THIN-FILMS ON ERBIUM SILICIDE BY SOLID-PHASE EPITAXY
    VEUILLEN, JY
    DANTERROCHES, C
    TAN, TAN
    JOURNAL OF APPLIED PHYSICS, 1994, 75 (01) : 223 - 226
  • [32] Solid-phase epitaxy of amorphous silicon films by in situ postannealing using RPCVD
    Skibitzki, Oliver
    Yamamoto, Yuji
    Schubert, Markus Andreas
    Weidner, Guenter
    Tillack, Bernd
    SOLID-STATE ELECTRONICS, 2011, 60 (01) : 13 - 17
  • [33] SILICON-ON-SAPPHIRE EPITAXY BY VACUUM SUBLIMATION - LEED-AUGER STUDIES AND ELECTRONIC PROPERTIES OF FILMS
    CHANG, CC
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1971, 8 (03): : 500 - &
  • [34] Microstructural analysis of heteroepitaxial β-Ga2O3 films grown on (0001) sapphire by halide vapor phase epitaxy
    Li, Yuewen
    Xiu, Xiangqian
    Xu, Wanli
    Zhang, Liying
    Xie, Zili
    Tao, Tao
    Chen, Peng
    Liu, Bin
    Zhang, Rong
    Zheng, Youdou
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2021, 54 (01)
  • [35] Structural perfection of heteroepitaxial silicon layers grown on sapphire by sublimation-source molecular beam epitaxy
    Denisov, S. A.
    Svetlov, S. P.
    Chalkov, V. Yu.
    Shengurov, V. G.
    Pavlov, D. A.
    Korotkov, E. V.
    INORGANIC MATERIALS, 2007, 43 (04) : 331 - 337
  • [36] Structural perfection of heteroepitaxial silicon layers grown on sapphire by sublimation-source molecular beam epitaxy
    S. A. Denisov
    S. P. Svetlov
    V. Yu. Chalkov
    V. G. Shengurov
    D. A. Pavlov
    E. V. Korotkov
    E. A. Pitirimova
    V. N. Trushin
    Inorganic Materials, 2007, 43 : 331 - 337
  • [37] SOLID-PHASE EPITAXY OF POLYCRYSTALLINE SILICON FILMS - EFFECTS OF ION-IMPLANTATION DAMAGE
    QUACH, NT
    REIF, R
    APPLIED PHYSICS LETTERS, 1984, 45 (08) : 910 - 912
  • [38] SOLID-PHASE EPITAXY OF SILICON ON GALLIUM-PHOSPHIDE
    DEJONG, T
    SARIS, FW
    TAMMINGA, Y
    HAISMA, J
    APPLIED PHYSICS LETTERS, 1984, 44 (04) : 445 - 446
  • [39] Silicon Carbide Solid-Phase Epitaxy on a Microporous Substratum
    Zmievskaya, Galina I.
    Bondareva, Anna L.
    Savchenko, Vladimir V.
    Levchenko, Tatiana V.
    DIFFUSION IN SOLIDS AND LIQUIDS VII, 2012, 326-328 : 243 - +
  • [40] KINETICS OF LASER-INDUCED SOLID-PHASE EPITAXY IN AMORPHOUS-SILICON FILMS
    KOKOROWSKI, SA
    OLSON, GL
    HESS, LD
    JOURNAL OF APPLIED PHYSICS, 1982, 53 (02) : 921 - 926
12345